, LJnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF230-233/IRF630-633 MTP12N18/12N20 N-Channel Power MOSFETs, 12 A, 150-200 V Power And Discrete Division Description TO-204AA TO-220AB These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. Low RDS(on) VQS Rated at ±20 V Silicon Gate for Fast Switching Speeds 'oss. vos(on), Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Paralleling Product Summary ID at ID at Part Number VDSS RDS (on) Tc = 25°C Tc = 100°C IRF230 200 V 0.40 n 9.0 A 6.0 A IRF231 160 V 0.40 n 9.0 A 6.0 A B.O A 5.0 A 8.0 A 5.0 A 200 V o.so n o.so n 0.40 n 9.0 A 6.0 A IRF631 150 V 0.40 JJ 9.0 A 6.0 A IRF632 200 V 8.0 A 5.0 A IRF633 150 V o.so n o.so n 8.0 A 5.0 A 0.35 n 0.35 n 12 A 8.5 A 12 A 8.5 A IRF232 200 V IRF233 150 V IRF630 MTP12N18 180 V MTP12N20 200 V Case Style TO-204AA TO-220AB Not« For information concerning connection diagram and package outline, refer to Section 7. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Oiinlitv IRF230-233/IRF630-633 MTP12N18/12N20 Maximum Ratings Characteristic Symbol Rating IRF220/222 IRF620/622 MTP7N20 Rating MTP7N18 Rating IRF222/223 IRF622/623 Unit VDSS Drain to Source Voltage1 200 180 150 V VDQR Drain to Gate Voltage1 RGB = 20 ktt 200 180 150 V VGS Gate to Source Voltage ±20 ±20 ±20 V Operating Junction and Storage Temperatures -55 to +150 -55 to +150 -55 to +150 °c 275 275 275 °c TJ, Ts!g TL Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Maximum Thermal Characteristics IRF220 - 233 IRF630-633 MTP12N18/20 1.67 1.25 °C/W R«JC Thermal Resistance, Junction to Case PD Total Power Dissipation at Tc - 25°C 75 100 W 'DM Pulsed Drain Current8 40 40 A Electrical Characteristics (Tc~25°C unless otherwise noted) Symbol Characteristic Mln Max Unit Test Conditions Off Characteristics V(BR)DSS loss Drain Source Breakdown Voltage V IRF230/232/630/632/ MTP12N20 200 MTP12N18 180 IRF231/233/631/633 150 Zero Gate Voltage Drain Current 250 1000 IGSS Gate-Body Leakage Current IRF230-233 ±100 IRF630-633/ MTP12N18/12N20 ±500 Vas = 0 V, ID •= 250 /iA KA VDS - Rated VDSS. VGS - 0 V MA VDS - 0.8 x Rated VDSS. VGS = O V, TC-125°C nA VGS = ±20 v, vDS = o v IRF230-233/IRF630-633 MTP12N18/12N20 Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) Symbol Characteristic Mln Max Test Conditions Unit On Characteristics VQSIUI) RDS(on) Vos(on) Gate Threshold Voltage V IRF230/233/630/633 2.0 4.0 |p - 250 jjA, VDS = Ves MTP12N18/12N20 2.0 4.5 ID - 1 mA, VDS = VGS VQS = 10 V, ID -5.0 A 2.1 V VGS -10 V; ID = 6.0 A 5.0 V VQS -10 V; ID -12.0 A; 4.2 V VGS -10 V; b = 6.0 A TC = 100°C S (U) VDS -10 V, ID = 5.0 A VDS = 25 V, VQS = 0 V f-1.0 MHz IRF230/231/630/631 0.40 IRF232/233/632/633 0.50 MTP12N18/12N20 0.35 Drain-Source On-Voltage2 MTP12N18/12N20 Sfs n Static Drain-Source On-Resistance2 Forward Transconductance 3.0 ID -6.0 A Dynamic Characteristics Qss Input Capacitance 800 PF C05S Output Capacitance 450 PF ct8S Reverse Transfer Capacitance 150 PF Switching Characteristics (Tc = 25°C, Figures 1, 2)1 t«on) Turn-On Delay Time 30 ns tr Rise Time 50 tdfrff) Turn-Off Delay Time 50 ns ns t| Fall Time 40 ns td(on) Turn-On Delay Time 50 ns VDD = 25 V, b = 6,0 A tr Rise Time 250 ns VGS -10 v, RGEN-SO fl td(ofl) Turn-Off Delay Time 100 ns t( Fall Time 120 ns QB Total Gate Charge 30 nC VDD - 90 V, 1D - 5.0 A VGS = 10 V, RGEN"=15 SI RGs = i5 n RGS - 50 n VQS -10 V, ID =12 A VDD -120 V