, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF510 IRF511 IRF512 IRF513 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information "OS(ON) 'o(ON) Order Number / Package (max) (min) TO-220 100V 60V 100V 0.612 0.612 4.0A 4.0A 0.812 3.5A 60V 0.812 3.5A BVDS9/ BV.,0, IRF510 IRF511 IRF512 IRF513 Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low Clss and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode O High input impedance and high gain n Complementary N- and P-Channel devices Package Options Applications (Note 1) D Motor control D Converters D Amplifiers D Switches D Power supply circuits n Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV,, Draln-to-Gate Voltage BV,DOS Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature' ±20V -55°Cto+150°C 300°C Note 1: See Package Outline section fro discrete pirojis 'Distance of 1.6 mm from case for 10 seconds. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Thermal Characteristics I0 (continuous)* Package IRF510 IRF511 ' IRF512 IRF513 Impulsed)* 16.0A 16.0A 4.0A i H Power Dissipation @ T0 = 25°C -4.0A 14.0A 14.0A 3.5A 3.5A °c)w "C/W IDR 'ORM • SOW 80 6.4 4.0A 16.0A 20W 20W 80 80 6.4 6.4 20W 80 6.4 4.0A 3.5A 3.5A 16.0A 14.0A 14.0A *ID (continuous) is limited by max rated T. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage w Mln IRF510. IRF512 100 IRF511, IRF513 60 Gate Threshold Voltage ostmi Typ 2.0 'GSS Gate Body Leakage 'on Zero Gate Voltage Drain Current Max Unit (Notes 1 and 2) Conditions V Vos = 0,l D = 250nA 4.0 V vos 500 nA VGS = 0, VDS t= Max Rating 250 1000 - VDS. ID = 250fA VGS = ±20V.V DS = 0 HA VGS = 0, Vos « 0.8 Max Rating TC = 125°C ON-State Drain Current 'o(ON) Static Drain-to-Source ON-State Resistance RDS(ON) IRF510. IRF511 4.0 IRF512, IRF513 3.5 vos IRF510, IRF511 0.6 IRF512, IRF513 0.8 Forward Transconductance Q» VGS = 10V A 1.0 1.5 C,ss Input Capacitance 150 Coss Common Source Output Capacitance 100 Reverse Transfer Capac tance CRSS 20 Rise Time 25 'd(OFF) Turn-OFF Delay Time 25 t, Fall Time », VSD IRF510,IRF611 2.5 Voltage Drop IRF512.IRF513 2.0 230 Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit Input 10%7 / -90% I(ON) 'd(ON) , 'r Oulpu! ' f '(OFF) 'I 'dfOFFJ 1 W%TE 90%S VGS = 10V, ID = 2.0A V vos pF V G S ,0,V D S = 25V I = 1 MHz > 'DION) x RDS(ON) Max Ratin9 ID = 2.0A V00 = 0.5BVDSS ns L L ; t 10% !„ i.Uft RS = son 20 Diode Forward Reverse Recovery Time l» n 25 Turn-ON Delay Time d(ON) > 'DION) x Ros(ON) Max Ratin9 V ns VGS = °- 'SO - 4'OA VQS = 0,I SD >3.5A TJ = 150»C, ISD = 4.0A. dlF/d, = 100A/MS