, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification • Industrial applications. Fig.1 Simplified outline (TO-39) and symbol. DESCRIPTION DESCRIPTION 1 emitter 2 3 base collector, connected to case NPN transistor in a TO-39 metal package. SYMBOL CONDITIONS PARAMETER VCBO collector-base voltage open emitter VCEO BSW68A collector-emitter voltage BSW68A open base VEBO emitter-base voltage open collector Ic ICM IBM collector current (DC) peak collector current PM storage temperature junction temperature Tamb operating ambient temperature UNIT MAX. ~ 150 V _ 150 V - 6 V - 1 A - 2 A - 200 mA T amb s25°C - 800 mW Tca!ss25°C - 5 W -65 +150 °C -65 200 °c °c tp £ 20 ms peak base current total power dissipation Tj Tstg MIN. +150 THERMAL CHARACTERISTICS CONDITIONS PARAMETER SYMBOL R|h j-a thermal resistance from junction to ambient Rthj-c thermal resistance from junction to case VALUE UNIT 220 K/W 35 KM free air CHARACTERISTICS T; = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current BSW68A CONDITIONS IE = 0; VCB = 75 V IE = 0;VCB = 75V;T ) = 150°C IE = 0; VCB = 150V IEBO hFE VcEsat VBEsat emitter cut-off current DC current gain Ic = 0; VEB = 3 V IC = 0;V|=B = 6V ^ _ TYP. UNIT _ 100 nA - 50 - 100 MA MA - 100 l c =10mA 30 lc = 100 mA 40 lc = 500 mA 30 - - 100 nA uA 10 - - 150 mV lc = 500 mA; la = 50 mA - - lc = 1 A; IB = 150mA lc = 100mA; IB = 10mA lc = 500 mA; IB = 50 mA - - 400 1 V 900 mV - - 1.1 V 1.4 V 20 pF pF Cc collector capacitance lc = 1 A; IB = 150mA IE - ie = 0; VCB » 10 V; f = 1 MHz - - -*e emitter capacitance transition frequency lc » t - 0: VEB = 0; f = 1 MHz lc = 100 mA; VCE = 20 V; f = 100 MHz - - fr MAX. VCE = 5 V lc = 1 A collector-emitter saturation voltage lc = 100 mA; IB = 10mA base-emitter saturation voltage • MJj 130 300 - mV MHz Switching times (between 10% and 90% levels) on turn-on time toff turn-off time con = 500 mA; lBqn - 50 mA; leoff " -50 mA - 500 - ns - 900 - ns N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.