na. TELEPHONE: (973) 378-2023 (212) 227-8008 FAX: (973) 376-8060 20 STERN AVE. SPRINQFIELO, NEW JERSEY 07081 U.3A 2N3565•PN3565 NPN LOW LEVEL HIGH GAIN AMPLIFIERS DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTORS PD . . . 625 mW @ TA - 25°C h FE ... 150 -600 @ 1.0mA • 25 V (MIN) See Package Outlines TO18-4 TO92-1 ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperatures Storage Temperature Operating Junction Temperature Lead Temperature Maximum Power Dissipation (Note 2) Total Dissipation at 25° C Case Temperature at 65° C Case Temperature at 25°C Ambient Temperature 2N3S6S 55°Cto+125°C 125°C 260° C PN3565 -55°C to+150°C 150°C 260° C LOW 1 1 I 0.5 W 0.3 W 0.2 W 0.625 W EBC 123 E BC 123 30 V 25 V 6.0 V 50 mA 30 V 25 V 6.0 V 50 mA 2N3565 PN3565 Maximum Voltages and Current VCBO VCEO V|=BQ IQ Collector to Base Voltage Collector to Emitter Voltage (Note 3) Emitter to Base Voltage Collector Current ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL hFE thFE hfe tvCE(sat) 'CBO tlcBO Cob BVCBO v CEO(sus) BV EBO hie hoe h fe CHARACTERISTIC DC Current Gain DC Current Gain High Frequency Current Gain Collector Saturation Voltage Collector Cutoff Current Collector Cutoff Current Open Circuit Output Capacitance Collector to Base Breakdown Voltage Collector to Emitter Sustaining Voltage Emitter to Base Breakdown Voltage Input Resistance Output Conductance Small Signal Current Gain MIN. MAX. 150 600 UNITS IC = 1.0 mA, V C £ = 10 V ic = 100 MA, V CE = 10 v 70 2.0 TEST CONDITIONS l c = 1.0 mA, V CE - 5.0 V, f = 20 MHz 12 0.35 V Ic = 1.0 mA, 10 = 0.1 mA 50 nA 3.0 HA IE = 0, V C B - 2 5 V IE = 0, V CB - 25 V, T A = 65°C 4.0 pF V IE = o, ic = 100MA 30 IE = °. V CB - 5-0 V, f = 140 kHz 25 V IB = 0, Ic = 2.0mA 6.0 V ic = o, IE = IO^A 2.0 20 kS2 0.5 100 Mmhos 120 750 1C = 1.0mA, VCE = 5.0 V f- 1.0kHz IQ = 1.0 mA, VCE " 5.0 V , f = 1.0kHz IC = 1.0 rriA, V C E = 5,0 V, f = 1 .0 kHz 1