, Una. 208TERNAVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212) 227-0006 FAX: (973) 376-8980 2N5455 PNP HIGH SPEED SATURATED LOGIC SWITCH ABSOLUTE MAXIMUM RATINGS ( M o t e l ) Maximum Temperatures ' Storage Temperature Operating Junction Temperature Lead Temperature (60 seconds) -65°C to +200°C 200° C 300° C Maximum Power Dissipation (Notes 2 & 3) Total Dissipation at 25°C Case Temperature at 25°C Ambient Temperature LOW 0.34 W Maximum Voltages and Current V CBO Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage V CEO Collector to Emitter Voltage (Notes 4 & 7) 1C DC Collector Current PHYSICAL DIMENSIONS JEDEC (TO-S2) s DIM. A B C D E F a H 1 J fflBI —isir^ .201 TYP. MAN. •19v .IBS .174 m 160 600 030 01 » 014 utT^IBTW •.it 4.H 0.741 0.443 0.404 l.M 1.17 OM NOTES 3.41 I.N 1J.70 .100 034 OJ4 9.14 4.n 044 OJ14 .044 0.711 1.17 1.21 SM it»» Iw dtownnont In IMAM LM4t •» goM-pllWd kM( ll«l NA 3 conftMtfld to (••• •igninOl NI Semi-C'onductors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Conductors is believed to he both accurate mid reliable at the lime of going to press. However VI Soni-C'ondufhirs assumes no responsibility tor jny errors or omissions discovered in its use NJ Semi-C'onduclors encourages aistrincrs to \cril> irui J;ila:;htets are current before plncing orders 2NS455 -15V -15V -4.5V -15V 300mA ELECTRICAL CHARACTERISTICS (25"C Ambient Temperature unless otherwise noted) CHARACTERISTIC SYMBOL ] CES 2N5455 MIN. MAX Collector Cutoff Current 50 50 UNITS nA IEBO BVcBO BVcES BV E BO BVCEO h FE Voltage (Note 6) DC Current Gain (Note 6) 100 V C E - -15V, V BE = 0 MA VCE = -10 v, V BE = o, TA - 125°C VCE - -15 v, V BE = o, TA - 125°C VEB- -4.5V, ic = o IE = o, ic = IOOMA IC-IOOMA, v 8E = o MA -15 V -15 V -4.5 V i C '0, IE - 100 MA -15 V I C - 10mA 20 30 VCE ' -0.4 V, Ic- 10mA VCE = -0 4 V ' 'C = 30 mA 120 30 VCE = -1.0 v, IG = ioomA 25 VCE * -1 -0 V, Ic = 300 mA 15 v CE(satl VBE ceb Ccb hel TS ton 'off Collector to Emitter Saturation Voltage (Note 6) Base to Emitter Voltage (Note 6) -0.70 Emitter to Base Capacitance (NoteS) Collector to Bate Capacitance (Note 5) Magnitude of Small Signal Current Gain v c e = -iov, V B E = O nA MA Emitter Cutoff Current Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Breakdown TEST CONDITIONS VCE • ~1 -° V. IC = 100 mA, T A - -55°C -0.15 -0.15 -0.23 -0.50 -0.85 -0.96 -1.20 -1.60 V 25 PF ic • o, VEB= -°-5 v, f = 1 .0 MHZ 6.0 PF IE • o, VCB = -10 v. f = 1 .0 MHZ V 1C" 10 mA, IB " 1.0 mA V Ic * 30 mA, Ig - 3.0 mA V 1C * 100 mA, 10 = 10 mA V Ic * 300 mA, IB " 30 mA V 1C * 10 mA, IB - 1 -0 mA V 1C = 30 mA, IB * 3.0 mA V 1C * 100 mA, Ig » 10 mA 4.5 IC " 300mA, IB - 30mA VCE = -10 V, Ic = 30 mA, f - 100 MHz Charge Storage Time Constant (see test circuit no. 384.) Turn On Time 35 ns 1C = 10 mA, I B1 = I B2 « 10 mA 20 ns (see test circuit no. 470) Turn Off Time IC- 300 mA, IBI =30 mA 30 ns 1C = 300 mA, IBI = 1(32 (see test circuit no. 470) 1 ThMB 3. Th«s 1 eiriyloy fi t h i i ih^ll o* toiiiat t<jf» o' 200*C, -rid |u»ei of 175°C/W (d«r»,mu (B( of S 7 mW/°C> jlragi n louvati a lir.itg* incorporating n guard c nal 01 ih» ondgn Ths oa»« fl|»o il b* ir»f)*lrM. ;yci» op*rationi. = 30 mA