na. TELEPHONE: 379(212) 227-0008 FAX; (973) 378-0980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3728 NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS llfU . . . 0.0-1.0 PROM 100 MA to 1.0 mA 9 20'C, 0.8-1.0 FROM 100 jjA to 1.0 mA, -65* C to +125°C = • • • 3-° mV (MAX > • |AVBE! ... 10 uv/°c (MAX) FROM 100 UA to 1.0 mA, -5S"c to +125"C ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperature* Storage Temperature Operating Junction Temperature Lead Temperature (60 seconds) -65° C to +200" C 200° C 300° C Maximum Power Dissipation (Notes 2 & 3) Total Dissipation at 25"C Case Temperature lit 100"C Cnin Tomporaluro at 25°C Ambient Temperature Maximum Voltages and Current V CBO Collector to Base Voltage Collector to Emitter Voltage (Note 4) Emitter to Base Voltage l£ Collector Current VC1C2 Collector^ to CoMectorj Voltage Voltage Rating any Lead to Case Ona Side LOW 0,67 W 0.43 W Both Sides 1.6W 0.91 W 0,55 W 60V 30V 5.0V 500mA ±200 V ±200V COEEBC 123456 VI Semi-Conductors reserves the right to change test conditions, parameter limin ;md package dimensions without notice Information furnished by NJ Scmi-C'unductors is believed to be both accurate and reliable.«the lime of going to press. However Semi •(. i xultitiors .i^suincs no re>punsibilily lor nny errors or uinissinns Oisvovvrcd in us u.te NJ Senn-C oiiJui.li rs _u-:ii incrs In vcrif) lh,» il.il;i,hitts .ire lurrent before plnciKs! urilers ELECTRICAL CHARACTERISTICS (25"C Ambient Temperature unless otherwise noted) (Cont'd.) SYMBOL CHARACTERISTIC "FE DC Current Gain MIN. 30 45 Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Sustaining Voltage (Notes 4 & 6) BVCBO BV EBO vceoisus) Collector Saturation Voltage v CE(Mt) v BE(sat) 80 60 6.0 30 ' (Note 6) Base Saturation Voltage (Note 6) ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hft High Frequency Current Gain Cob Common Base, Open Circuit, Output Capacitance Common Base, Open Circuit, Cjb Input Capacitance Input Impedance Reverse Voltage Feedback Ratio Output Conductance Forward Current Transfer Ratio Wide Band Noise Figure hie h re hoe hfe NF- DC Current Gain Ratio (Note 5) h FE1 h FE2 Base to Emitter Voltage Differential v BE1-V B E2l 4.0 2.5 1.2 50 0.8 MAX. UNITS TEST CONDITIONS IC • 0.1 mA, VCE ' 5.0 V , i c - i.om.A. VCE "5.0V 180 280 1C- 150mA, V CE - 6 . 0 V (Noto6) i c -io/iA. IE-.O i c -o, IE-IOM IC'IOmA, l B " 0 * \Q 1 150 mA, IQ « 15mA 0.22 V 1.1 10 10 10 V nA *«A nA 6.0 8.0 PF IE "0. VCB "10V. ^140 kHz 20 PF IC * °. VEB " 2.0 V, f - 140 kHz 6.0 300 20 200 7.0 k« x10~6 dB 1.0 1C" 150mA, IB -15mA IE • o. VCB " 50 v lE-O.VCB-50V,TA-150°C IC-O.VEB-3.0V IC • 1 .0 mA, VCE • 10 V. f - 20 MHz 1C • 50 mA. VCE - 10 V, f " 100 MHz IC " 1.0mA. VCE = 10 V, f = 1.0 kHz 1C • 1.0mA. VCE - 10 V . f » 1.0 kHz IC = 1 .0 mA. VCE = 10 V, f * 1 .0 kHz 1C" 1-0 rnA, VCE- 10 V,f = 1.0kHz 1C - 0.1 mA, VCE " 5.0 V, f = 1 5.7 kHz, 3.0 dB pts. @ 25 Hz and 10 kHz. R s - 1 .0 kit 1C" 100 lift, to 1.0mA, V CE " 5.0 V 5.0 mV 1C - 100 MA to 1 .0 mA. VCE " 5.0 V A(VgEi-V[jE2l|B ase !0 Emitter Voltage Differential 1.6 20 j*V/°C) mV c • 100 pA to 1 .0 mA, VCE " 5.0 V TA - -55° C to +25° C A(V B E1- V BE2>I Base to Emitter Voltage Differential 2.0 20 /iV/°C) mV c - 100 pA to 1 .0 mA, VCE • 5.0 V T A - +25° C to+125°C I NOTES: 1. These ratings are limiting value* above which the serviceability of any Individual semiconductor device may be impaired. 2. Thnso nro stnnrly unto limits. Tho fnctory should ho consulted on Applications Involving pulsod or low duty cyclo opornllons. 3. Those rations glvo a maximum (unction temperature of 200"C and (unction to ambient thermal resistance of 384"C/W (derating factor of 2.57 mW/ C) for one side; 318 C/W (derating factor of 3.14mW/"O for both sides; (unction to case thermal roslstanee of 175"c/W (derating factor of 5.71 mW/ C) for one sldo; 109 C/W (derating factor of 9.15 mW/"O for both sides. 4. Rating refers to i high currant point where collector to emitter voltege It lowest, 5. Lowest of two hpg readings Is taken as hpEi for purposes of this retlo. 6. Pulse conditions: length - 300 Ms; duty cycle - IX.