s., U nc. <Se.mi-Condu.ctoi. <£/\ £ur TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON ANNULAR TRANSISTORS MPSU01 MPSU01A . . . designed for complementary symmetry audio circuits to 10 Watts output. • Low Collector-Emitter Saturation Voltage — vCE(sat) = 0.5 Vdc (Max) @ Ic = 1.0 Adc • Complements to PNP MPSU51 and MPSU51A • Uniwatt Package for Excellent Thermal Properties 1.0 Watt @TA = 25°C A B —1 Q T E « C 1 1 I MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Power Dissipation 0 TA " 25°C Derate above 25°C — Symbol MPSU01 MPSU01A Unit VCEO 30 40 Vdc VCB VEB 'c PD 40 50 Vdc 5.0 Vdc 2.0 Adc 1.0 8.0 Watt mW/°C N -JU, STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (COLLECTOR CONNECTED TO NOTE: 1. LEADS WITHIN 0.15 mm(0.006) TOTAL OF TRUE POSITION AT CASE, AT MAXIMUM MATERIAL CONDITION. MUJMETERS MCHES Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RSJC 12.5 °C/W DM A B C D F Q H J K L N Thermal Resistance. Junction to Ambient H»JA(1) 125 °c/w 9 239 289 1.005 0700 BSC 0.094 0.106 R 1.14 1.40 0.045 Total Power Dinipation 9 TQ " 25°C Derate above 25°C Operating and Storage Junction Temperature Range TJ.T"stg Watts mW/°C 10 80 PD -55 to +150 °C THERMAL CHARACTERISTICS I1' R SJA '• measured with the device soldered into •typical printed circuit bocrd. Quality Semi-Conductors MM MAX MM MAX 9.14 9.S3 0.360 OJ7S 6.60 774 0.2SJ 0785 $.41 5.68 0.213 OJ8 0.53 0.015 0.223 0.021 3.18 133 O.IK 0.131 2.54 BSC 0.100 BSC 0.155 4.014 0.016 12.70 0.458 0.500 25.53 5.08 BSC 0.988 3.94 4.19 OJ6 0.41 11.63 24.58 0.165 0.055