MPSU01 MPSU01A

s., U nc.
<Se.mi-Condu.ctoi.
<£/\ £ur
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN SILICON ANNULAR
TRANSISTORS
MPSU01
MPSU01A
. . . designed for complementary symmetry audio circuits to 10
Watts output.
•
Low Collector-Emitter Saturation Voltage —
vCE(sat) = 0.5 Vdc (Max) @ Ic = 1.0 Adc
• Complements to PNP MPSU51 and MPSU51A
• Uniwatt Package for Excellent Thermal Properties 1.0 Watt @TA = 25°C
A
B —1
Q
T
E « C
1
1 I
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Power Dissipation 0 TA " 25°C
Derate above 25°C
—
Symbol
MPSU01
MPSU01A
Unit
VCEO
30
40
Vdc
VCB
VEB
'c
PD
40
50
Vdc
5.0
Vdc
2.0
Adc
1.0
8.0
Watt
mW/°C
N
-JU,
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
(COLLECTOR CONNECTED TO
NOTE:
1. LEADS WITHIN 0.15 mm(0.006) TOTAL OF TRUE
POSITION AT CASE, AT MAXIMUM MATERIAL
CONDITION.
MUJMETERS
MCHES
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RSJC
12.5
°C/W
DM
A
B
C
D
F
Q
H
J
K
L
N
Thermal Resistance. Junction to Ambient
H»JA(1)
125
°c/w
9
239
289
1.005
0700 BSC
0.094
0.106
R
1.14
1.40
0.045
Total Power Dinipation 9 TQ " 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ.T"stg
Watts
mW/°C
10
80
PD
-55 to +150
°C
THERMAL CHARACTERISTICS
I1' R SJA '• measured with the device soldered into •typical printed circuit bocrd.
Quality Semi-Conductors
MM
MAX
MM
MAX
9.14
9.S3
0.360
OJ7S
6.60
774
0.2SJ
0785
$.41
5.68
0.213
OJ8
0.53
0.015
0.223
0.021
3.18
133
O.IK
0.131
2.54 BSC
0.100 BSC
0.155
4.014
0.016
12.70
0.458
0.500
25.53
5.08 BSC
0.988
3.94
4.19
OJ6
0.41
11.63
24.58
0.165
0.055