MPS-U03 MPS-U04 - New Jersey Semiconductor

, Unc..
<Ss.rn.i- Conductor
TELEPHONE: (201) 376-292:
(212)227-600!
FAX: (201) 376-896':
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MPS-U03
MPS-U04
NPN SILICON
AMPLIFIER
TRANSISTORS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector Base Voltage
Emitter-Base Voltage
Collector Current
Totll Power Dissipation @ TA = 25°C
Derate Above 25°C
Total Power Dissipation ® TC = 2S°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Solder Temperature. 1/16" From Case
for 10 Seconds
Symbol
MPS-U03
MPSU04
VCEO
120
180
Vdc
VCB
VEB
'c
PD
120
180
Vdc
Unit
Tj, Ts,g
-55 to + 150
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
—
260
°C
5
1
1
8
10
80
PO
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Ambient
Thermal Resistance, Junction to Gate
Symbol
Max
Unit
R 8JA
125
H»JC
12 .6
°c/w
°c/w
ELECTRICAL CHARACTERISTICS <TA - 25°C unlnt otherwise noted)
Characteristic
Symbol
Min
Max
120
180
—
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
<IC = 1.0 mAdc. I B «0)
Collector-Base Breakdown Voltage
(IC-IOOjiAdc, I E =0)
Vdc
VIBRICEO
MPS-U03
MPS-U04
MPS-U03
MPS-U04
Emitter-Base Breakdown Voltage
(Ig - 100 MAdc, IC -0)
V(BR)CBO
—
~
0.1
0.1
"FE
40
-
-
vCE(sat)
~~
0.5
Vdc
1.0
Vdc
VIBRIEBO
Collector Cutoff Current
(VCB = 100 vdc, IE =oi
MPS-UOS
(VCB = 150 Vdc, l£ " 0)
MPS-U04
Vdc
120
180
5.0
ICBO
—
Vdc
tiAdc
ON CHARACTERISTICS III
OC Current Gain
(1C ' 10 mAdc, VCE - 10 Vdc)
Collector-Emitter Saturation Voltage
(lc » 200 mAdc, IB - 20 mAdc)
Bate-Emitter On Voltage
He = 200 mAdc, VCE ' ' °vdc>
vBE(on)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(1C • 50 mAdc. V CE = 20 Vdc, f - 20 MHz)
Output Capacitance
(VCB = 10 vdc, IE = o, f = 100 kHz)
Input Capacitance
(VflE - 0.5 Vdc, Ic " 0, f - 100 kHz)
(11 Pulse Test: Pulse Width t. 300 us, Duty Cycle < 2.0%.
'T
35
-
MHz
C0b
~
12
pf
*~
110
pf
• cib