, Unc.. <Ss.rn.i- Conductor TELEPHONE: (201) 376-292: (212)227-600! FAX: (201) 376-896': 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U03 MPS-U04 NPN SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector Base Voltage Emitter-Base Voltage Collector Current Totll Power Dissipation @ TA = 25°C Derate Above 25°C Total Power Dissipation ® TC = 2S°C Derate Above 25°C Operating and Storage Junction Temperature Range Solder Temperature. 1/16" From Case for 10 Seconds Symbol MPS-U03 MPSU04 VCEO 120 180 Vdc VCB VEB 'c PD 120 180 Vdc Unit Tj, Ts,g -55 to + 150 Vdc Adc Watts mW/°C Watts mW/°C °C — 260 °C 5 1 1 8 10 80 PO THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Ambient Thermal Resistance, Junction to Gate Symbol Max Unit R 8JA 125 H»JC 12 .6 °c/w °c/w ELECTRICAL CHARACTERISTICS <TA - 25°C unlnt otherwise noted) Characteristic Symbol Min Max 120 180 — - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage <IC = 1.0 mAdc. I B «0) Collector-Base Breakdown Voltage (IC-IOOjiAdc, I E =0) Vdc VIBRICEO MPS-U03 MPS-U04 MPS-U03 MPS-U04 Emitter-Base Breakdown Voltage (Ig - 100 MAdc, IC -0) V(BR)CBO — ~ 0.1 0.1 "FE 40 - - vCE(sat) ~~ 0.5 Vdc 1.0 Vdc VIBRIEBO Collector Cutoff Current (VCB = 100 vdc, IE =oi MPS-UOS (VCB = 150 Vdc, l£ " 0) MPS-U04 Vdc 120 180 5.0 ICBO — Vdc tiAdc ON CHARACTERISTICS III OC Current Gain (1C ' 10 mAdc, VCE - 10 Vdc) Collector-Emitter Saturation Voltage (lc » 200 mAdc, IB - 20 mAdc) Bate-Emitter On Voltage He = 200 mAdc, VCE ' ' °vdc> vBE(on) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (1C • 50 mAdc. V CE = 20 Vdc, f - 20 MHz) Output Capacitance (VCB = 10 vdc, IE = o, f = 100 kHz) Input Capacitance (VflE - 0.5 Vdc, Ic " 0, f - 100 kHz) (11 Pulse Test: Pulse Width t. 300 us, Duty Cycle < 2.0%. 'T 35 - MHz C0b ~ 12 pf *~ 110 pf • cib