i, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5415 2N5416 SILICON PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic IB Plot Plot T$tg Tj Parameter Collector-Base Voltage (le = 0) Collector-Emitter Voltage (le = 0) Emitter-Base Voltage (Ic = 0) Collector Current Base Current Total Dissipation at T c < 25 °C Total Dissipation at T amb < 50 °C Storage Temperature Max. Operating Junction Temperature Value 2N5415 -200 -200 -4 j ' | -1 -0.5 Unit 2N5416 -350 -300 -6 V V V A A 10 1 W -65 to 200 °c °c 200 W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient °c/w °c/w 17.5 175 Max Max ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) Parameter Symbol Test Conditions u.A MA -50 uA -20 -20 uA u.A Collector Cut-off Current (IB = 0) Emitter Cut-off Current (lc = 0) VCE = -150 V Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Ic = -50 mA R BE = SOU for 2N5416 -350 V Ic = -10 mA for2N5415 for 2N5416 -200 -300 V V VBE* Collector-Emitter Saturation Voltage Base-Emitter Voltage hFE* DC Current Gain VcE(sat)* hfe fl CCBO for2N5415 for2N5416 VCB = -175 V VCB = -280 V V EB = -4 V VEB = -6 V Ic = -50 mA IB = -5 mA -2.5 V Ic = -50 mA VCE = - 1 0 V -1.5 V Ic = -50 mA for2N5415 for 2N5416 VCE = -10 V Small Signal Current Gain Transition frequency Ic = -5 mA Collector Base Capacitance IE = 0 30 30 VCE = -10V f=1KHz 25 lc = -10mA VCE = - 1 0 V f = 5MHz 15 VCB = -10 V ••• Pulsed: Pulse duration = 300 us, duty cycle 1 .5 % inch mm DIM. TYP. MIN. MAX. 12.7 TYP. MAX. 0.500 B 0.49 0.019 0 6.6 0.260 E 8.5 0.334 F 9.4 0.370 0.200 5.08 H 1.2 0.047 I 0.9 0.035 L Unit -50 -50 ICEO VcEO(sus)* G Max. for2N5415 for2N5416 VCER* A Typ- Collector Cut-off Current (IE = 0) IEBO MIN. Min. ICBO 45° (typ.) f = 1MHz 150 120 MHz 25 PF