NJSEMI 2SC2245_13

, Una.
!_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Product Specification
2SC2245
Silicon NPN Power Transistors
DESCRIPTION
•With TO-3 package
High voltage ,high speed
APPLICATIONS
•Power switching
•Power amplification
power driver
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratlngt(Ta"25 )
SYMBOL
PARAMETER
CONDmONS
VALUE
UNFT
VCBO
Collector-base voltage
Open emitter
450
V
Vcw
Collector-emitter voltage
Open base
400
V
Vao
Emitter-base voltage
Open collector
5
V
Ic
Collector current
10
A
leu
Collector current-peak
20
A
PT
Total power dissipation
100
W
Tj
Junction temperature
200
-
T««
Storage temperature
-65-200
Trts25L!
THERMAL CHARACTERISTICS
SYMBOL
R|h|-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
vw
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Product Specification
Silicon NPN Power Transistors
2SC2245
CHARACTERISTICS
Tj«25
unless otherwise specified
CONDITIONS
MIN
TYP.
UNIT
MAX
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
lc=0.1A;L=25mH
VCEM.
Collector-emitter saturation voltage
IC=4A; le=0.8A
1.2
V
VBEMI
Base-emitter saturation voltage
lc=4A; I8=0,8A
1.5
V
ICBO
Collector cut-off current
VCB=450V; IE=0
Tc=125
1
4
mA
ICEO
Collector cut-off current
VCE=400V; IB=0
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; lc=0
1.0
mA
hFE
DC current gain
|C=4A ; VCE=5V
1.0
MS
2.0
MS
1.0
MS
t
400
V
10
Switching times
u
Turn-on time
t.
Storage time
t(
Fall time
IC=4A ;IB1=- IB2-0.8A
LU
3.84-4.21
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