NJSEMI 2SA1930

, Line.
J.E.IIS.U
C7
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SA1930
Silicon PNP Power Transistor
DESCRIPTION
• High Transition Frenquency : fr=200MHz(Typ.)
• Complementary to 2SC5171
1
PIN 1.BASE
2.COLLECTOR
3. EMITTER
APPLICATIONS
1 2 3
TO-220F package
• Power amplifier applications
• Driver stage amplifier applications
-
B
-
m
\f
- C-
-sU I
A
V
; i
"-V;,U
i F,
fc '-*
Q
i ,_L H
\
- R-
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
VCBO
PARAMETER
Collector-Base Voltage
VALUE
UNIT
-180
V
.-D
- N-
J --
mm
-180
V
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25'C
20
W
Tj
Junction Temperature
150
°C
-55-150
'C
VCEO
Collector-Emitter Voltage
VEBO
WIN
DIM
A 14.95
B 10.00
C
4.40
D
0.75
F
H
J
K
L
N
q
R
Tstg
Storage Temperature Range
s
u
3.10
3.70
0.50
13.4
1.10
5.00
2.70
2.20
2.65
6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable nt the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
2SA1930
ELECTRICAL CHARACTERISTICS
Tc~25'C unless otherwise specified
SYMBOL
PARAMETER
VcEO(SUS)
Collector-Emitter Sustaining Voltage
lc=-10mA;l B =0
VoE(sat)
Collector-Emitter Saturation Voltage
IC=-1.0A;IB=-0.1A
-1.0
V
VBE(OH)
Base-Emitter Voltage
lc=-1A;V CE =-5V
-1.5
V
ICBO
Collector Cutoff Current
At rated Voltage
-5
uA
IEBO
Emitter Cutoff Current
At rated Voltage
-5
wA
hpE-1
DC Current Gain
lc=-0.1A; VcE=-5V
100
hpE-2
DC Current Gain
lc=-1A;V CE =-5V
40
Cob
Collector Output Capacitance
lE=0;V CB =-10V,f=1MHz
Current-Gain— Bandwidth Product
lc=-0.3A; VCE=-5V
fr
CONDITIONS
MIN
TYP.
MAX
-180
UNIT
V
320
16
PF
200
MHz