BUW32/32P/32PFI BUW32A/32AP/32APFI HIGH VOLTAGE POWER

J.
C/
, One.
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUW32/32P/32PFI
BUW32A/32AP/32APFI
HIGH VOLTAGE POWER SWITCH
DESCRIPTION
The BUW32/A, BUW32P/AP and BUW32PFI/APFI
are silicon multiepitaxial mesa PNP transistors
mounted respectively in TO-3 metal case, TO-218
plastic package and ISOWATT218 fully isolated
package. They are intended for high voltage, fast
switching and industrial applications.
TO-218
TO-3
ISOWATT218
INTERNAL SHEMATIC DIAGRAM
nC
PNP
NP
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
lc
IB
Ptot
Tstg
T,
Parameter
Collector-emitter Voltage (VBE = 0)
Collector-emitter Voltage (IB - 0)
Emitter-base Voltage (lc = 0)
Collector Current
Base Current
Total Power Dissipation at Tc < 25 °C
Storage Temperature
Max. Operating Junction Temperature
BUW
32/P/PFI
-400
-350
32A/AP/APFI
-450
-400
-5
-7
-10
V
V
A
TO-3
TO-218
ISOWATT218
125
105
55
- 65 to 175
-65 to 150 -65 to 150
150
V
A
-5
175
Unit
150
W
°C
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
THERMAL DATA
TO-3
Rlh j-casa
Thermal Resistance Junction-case
max
1.19
TO-218 ISOWATT218
1,ia--- ,~-2.£!
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Symbol
ICES
Parameter
Collector Cutoff Current
Test Conditions
(VuE = 0)
IEBO
V CEO(tus)*
VcE(sal)*
VBE(sat)*
Emitter Cutoff Current
(lc * 0)
Collector-emitter Sustaining
Voltage (IB =0)
DC Current Gain
Second Breakdown
Collector Current
hFE'
U/b
ts
tl
Unit
mA
Tease = 125 °C
-5
mA
VEB = Rated VEBO
- 1
mA
Max.
-350
-400
V
V
IB=-1.5A
- 1.5
V
IC=-5A
le=-1.5A
- 1.6
V
IC=--1A
VCE="5V
12
-4.2
-3.5
-1.7
Resistive Load
Vcc - - 250 V
|a, ,-|B2 = - 1 A
' Pulsed: pulse duration = 300 ps, duly cycle = 1.5 %.
Safe Operating Areas,
Safe Operating Areas.
-t(A)
IS1
10*
Typ.
IC=-5A
Vce = - 30 V
for BUW32/A
for BUW32P/AP
for BUW32PFI/APFI
Turn-on Time
Storage Time
Fall Time
ton
-1
lc -- 100 mA
for BUW32/P/PFI
for BUW32A/AP/APFI
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
Win.
VCE - Rated V CE s
VCE = Rated VCES
VCEW
A
A
A
0.3
0.6
0.7
1.5
US
us
0.25
0.6
us