i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6738 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Designed for use in high-voltage, high-speed , power switching in inductive circuit, they are particularly suited for 115 1 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-220C package and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1 .5V 450 V VCEX Collector-Emitter Voltage-VBE= -1 .5V 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V Collector Current-Continuous 8 A Collector Current-Peak 10 A Ic ICM 4 A Collector Power Dissipation TC=25'C 100 W Junction Temperature 150 'C -65-150 •c IB Base Current-Continuous PC T, Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS T SM ES mm DIM MIN A 15.70 9.90 B C 4.20 D 0.70 3.40 F G 4.98 2.70 H J 0.44 K 13.20 1.10 L 2.70 Q R SYMBOL Rth j-c PARAMETER Thermal Resistance.Junction to Case MAX UNIT s 1.25 •c/w LJ V 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon NPN Power Transistor 2N6738 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified PARAMETER SYMBOL CONDITIONS MIN MAX UNIT VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0 VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A 1 V VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 4A 2 V Base-Emitter Saturation Voltage lc= 5A; IB= 1A 1.6 V ICEV Collector Cutoff Current VcEv=450V;VBE(off)=-1.5V VcEv=450V;VBE(off)=-1.5V;Tj= 100°C 0.1 1.0 mA I £80 Emitter Cutoff Current VEB= 8V; lc= 0 2 mA HFE DC Current Gain lc= 5A ; VCE= 3V 10 40 fr Current-Gain — Bandwidth Product lc= 0.2A; VCE= 10V, ftest= 1MHz 10 60 MHz 0.1 us 0.4 ns VeE(sat) 300 V Switching Times; Resistive Load td Delay Time tr Rise Time ts Storage Time 2.5 us tf Fall Time 0.5 w s lc= 5A; IB1= -IB2= 1A,VCC= 125V; tp= 20 u s, Duty Cycled 1%