U <3E,mi-(~onaiictoi iJ-^ioauati, Line. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon NPN Power Transistors 2SC2542 DESCRIPTION With TO-220C package •High voltage ,high speed switching •High reliability APPLICATIONS • •Switching regulators <—<» . •Ultrasonic generators •High frequency inverters W General purpose power amplifiers PINNING DESCRIPTION PIN 1 Base 2 Collector;connected to mounting base 3 Emitter 1 2 3 Fig.1 simplified outline (TO-220C) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 5 A 1.5 A 40 W - Ic Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -45-150 Tc=25 THERMAL CHARACTERISTICS PARAMETER SYMBOL Rthj-C Thermal resistance junction case MAX 3.0 UNIT /W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage lc=10mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage lc=1mA;l E =0 450 V V(BR)EBO Emitter-base breakdown voltage l E =0.1mA;lc=0 7 V VcE(sat) Collector-emitter saturation voltage lc=2A; IB=0.4A 1.2 V VsE(sat) Base-emitter saturation voltage lc=2A; IB=0.4A 1.5 V ICBO Collector cut-off current Vcs=450V ;IE=0 1.0 mA IEBO Emitter cut-off current VEe=7V; lc=0 0.1 mA MFE DC current gain lc=2 A ; VCE=5V 1.0 us 2.0 MS 1.0 MS MIN TYP. MAX UNIT 10 Switching times *on Turn-on time ts Storage time tf Fail time lc=4A; IB1=0.8A lB2=-0.8A;RL=20n & leroo- 2830^ 0.44+0.01