NJSEMI 2SC2542_13

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TELEPHONE: (973) 376-2922
(212) 227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
Silicon NPN Power Transistors
2SC2542
DESCRIPTION
With TO-220C package
•High voltage ,high speed switching
•High reliability
APPLICATIONS
•
•Switching regulators
<—<»
.
•Ultrasonic generators
•High frequency inverters
W
General purpose power amplifiers
PINNING
DESCRIPTION
PIN
1
Base
2
Collector;connected to
mounting base
3
Emitter
1 2 3
Fig.1 simplified outline (TO-220C) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
5
A
1.5
A
40
W
-
Ic
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-45-150
Tc=25
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rthj-C
Thermal resistance junction case
MAX
3.0
UNIT
/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
lc=10mA; IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
lc=1mA;l E =0
450
V
V(BR)EBO
Emitter-base breakdown voltage
l E =0.1mA;lc=0
7
V
VcE(sat)
Collector-emitter saturation voltage
lc=2A; IB=0.4A
1.2
V
VsE(sat)
Base-emitter saturation voltage
lc=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
Vcs=450V ;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEe=7V; lc=0
0.1
mA
MFE
DC current gain
lc=2 A ; VCE=5V
1.0
us
2.0
MS
1.0
MS
MIN
TYP.
MAX
UNIT
10
Switching times
*on
Turn-on time
ts
Storage time
tf
Fail time
lc=4A; IB1=0.8A
lB2=-0.8A;RL=20n
&
leroo-
2830^
0.44+0.01