TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS 2NMM 2NMM 2N«M1 Symbol MPFHM MPFMM MFHW1 Riling Drain-Source Voltage Drain-Gate Voltage Yos 35 so SO 35 60 so Gate-Source Voltage VDQ VGS Drain Current — Continuous (1) Pulsed (2) lo 'DM Total Device Dissipation @ TC = 25°C Derate above 26°C PD Total Device Dissipation © TA - 25'C Derate above 25"C PD Operating and Storage Junction Temperature Range TJ, T31g * 30 Unit Vdc Vde Vdc Ado 2.0 3.0 2N6659 MPF6659 thru 2N6661 thru MPF6661 TO-39 (TO-205AD) 2NMW 2NMM 2NMA1 MPF8869 MPF66W MPFMtt 626 GO 2.6 20 - 1.0 8.0 -55 to +160 Welts mWC Watts mW/°C TO-92 (TO-226AE) "C TMOS SWITCHING FET TRANSISTORS (1) The Powor Dissipation of the package may reault In a lower continuous drain current, (2) Putee Width •• 300 /is. Duty Cycle *i 2.0%. N-CHANNEL — ENHANCEMENT ELECTRICAL CHARACTERISTICS <TA " 25'C unless otharwlse noted.) Symbol Chtrictarlittc Unit OFF CHARACTERISTICS ZerO'Gate-Voltaga Drain Currant (VDS "~ Maxlmoni Rating, VQS ^ 0) Gala-Body Leakage Current (VGS - ' 6 v' VDS - <» Cralrl-Source Breakdown Voltage (VQS - o. ID - 10 /JM 2NC65S. MPFeesa IDSS — — 10 tiAdG IGSS ~ — 100 t>Adc V(BR|DSX - 0,8 1.4 2.0 2N6659, MPF66S9 2N6660, MPFBS80 2N6661, MPF6661 — —. — — ~_ t.a 2N6660, MPF6859 2N6660, MPFOaaO 2NB661, MPF6S61 — — 2N6660, MPF6680 2N6661. MPF6661 ON CHARACTEHIST1CSI1] Gate Threshold Voltage IVos •* VQS, ID - 1.0 mA) Drain-Source On-Voltage (VQS = 10 V, ID - 1.0 A) (VQS •" 5.0 V, ID = 0.3 Al Static Drdtn-Sourue On Raalstaiice (VGS = 1C Vdc, Irj = 1.0 Adcl On-State Orafrt Current (VDS = 26 V, VQS = 10 VI SMALL-SIGNAL CHARACTERISTICS Input Capacitance (YDS " 2B V- V<3S - 0, f - 1.0 MHzl flevarsa Transfer Capacitance (vDs - 26 v, VGS - o. f - 1.0 MHI) Output Capacitance (VDS " 20 v' VGS ^ o, f ~ i.o MH*I Forward Transccnductance IVrjg * 2 6 V, ID -" 0-5 A) - 36 60 90 VGS(Th) vDS(on] fDSIon! — 0.8 0.9 I 0.9 — -~ — — _ — 'D(on) 1.0 ^138 crss 2N6959, MPFM59 2N6660, MPF6660 2N6601, MPF6661 Vdc Vdc 3.0 4,0 1.5 1,5 1.8 Ohms 2.0 1.8 3.0 4.0 — Amps — 30 GO pf — 3.6 10 pF 20 40 PF — — mmhoa ^OSS Ufa Vdc 170 NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N8659 thru 2N8661, MPF8859 thru MPF6661 ELECTRICAL CHARACTERISTICS |TA - 26°C unles» otlmrvviM noted.) Symbol Mln TVP Max tr — — — _ 5.0 nR 'f 5.D Turn-On Time *on — 5.0 Turn-OH Time toff - — _ ns ns ns Chiuourlgtlo SWITCHING CHABACTERISTICSdl Rise Tims Fall Tlnw | 5.0 Unit J (1) Pulse Tasl: Pulse Wldih s 900 j*s. Duty Cycle e 2.0%. RESISTIVE SWITCHING FIGURE Z -. SWITCHING WAVEFORMS FIGURE 1 — SWITCHING TEST CIRCUIT + 2SV ariorator .^ *" —j V|n "V- , ]V. son IX i 20 dB h' To Sftrrpling Scope 50 fl Infill CLI--3 ' Vout 1 au'Pul Inverttd * M 150 rc] loo idfenj, DRAIN CURRBiT MSPS) it r/V ¥/' 0*- 10*^ 90*Jj -&*.... = fiw V. 10 Puh. Wi<"h «»*, •K_i 2.0 M VDS- BPAW-TO-SOURCE VOLTAG6 (VOLTSI FIGURE 8 — CAPACITANCE Y.rauJ URA1N TO-SOURC6 VOLTAGE RQUPE 3 — OUTPUT CHARACTERISTICS > / 1.0 Tj, JUNCTION TEMPERAIUHE s f^** V,n PV90* FIGURE 4 — ON-REGION CHAHACTEfllSTlCS FIGURE 3 — V<jS(th) NOSMAUZED v.nti. TEMPERATURE a II VOUI~ / Input a — "o(f-'•DO*. ^ 50 111 1.0 MH * -ion* ^"7,07 Vos - °V 80 9.0V ~S.OV n 100 Vss . 10 V % a «, % e.ov h*.QV. 10 20 30 Vos. DIUIN-TO-SOURCE VOLTAOE (VOITS) 10 M M 40 SO Vos, MAW-TO-SOURCE VOLTAGE MH.TS)