2N4856,A - New Jersey Semiconductor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 378-2922
(212) 227-8008
FAX; (973) 376-8860
2N4856,A
thru
2N4861,A
TO-18
MAXIMUM RATINGS
Symbol
Riling
2N48S«,A ZN4859A
2N48S7.A 2N48»0,A
2N486»,A 2N4881.A
Unit
Drain-Source Voltage
V 05
+ 40
t30
Vdc
Drain-Gate Voltage
VDG
r40
+ 30
Reverie Gate-Source Voltage
VGSR
-40
-30
Vdc
Vdc
IGF
PO
Forward Gate Current
Total Device Ditiipition
© TA • 25'C
Derate above 26*C
Storage Temperature Rang*
^"8
60
mAdc
360
2.4
mW
mW/°C
-6610 i 175
JFET
SWITCHING
N-CHANNEL — DEPLETION
•c .
I
ELECTRICAL CHARACTERISTICS ITA » 2E'C unleti otherwiae noted.l
Chinctirlitlc
Symbol
Mln
Mix
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(1(3 - 1.0 fiAdc, Vps * °l
Gate Revarie Current
(VGS - -20 Vdc, Vos
(VQS » - IB Vdc. VQS
(VGs • -20 Vdc, Vos
(VGS • -16 Vdc, VQS
•
-
2N4S56.A, 2N4867.A, 2N485B.A
2N4869,A, 2N4860.A, ?N4861,A
01
2N4866.A 2N4857A 2N4858.A
O)
2N4859.A, 2N4860,A, 2N4861.A
0, TA'- 'WCI 2N4866,A, 2N4857.A, 2N4868.A
O, TA - ISO'CI 2N4859.A, 2N4860.A. 2N4861.A
VIBRIGSS
vac
-
40
30
!GSS
026
-
^Adc
05
r-
Gate Source Cutoff Voltage
IVQS - 19 Vdc, ID - 0.5 "Add
lAdc
0.26
°'b
-\
Drain Cutoff Currant
|VDS - 15 Vdc, VQS - -10 Vdc)
(Vos " 16 Vdc, VGS • -10 Vdc, TA • 150'C)
-
.H
Vdc
v GS(off)
2N4866.A, 2N4B59.A
2N4867.A, 2N4860.A
2N4868A 2N4861.A
-4.0
-2.0
0.8
10
8.0
4.0
'
'Dloffl
nAdc
MAdc
0.26
0.5
;
ON CHARACTERISTICS
Zero-Gaie-Voltaga Drain Currant! 1)
(Vos " 16 Vdc, VQS " 01
Drain-Source On-Voltag*
(ID - 20 mAdc, VGS ' °)
dO - 10 mAdc, VQS • 0)
do « 5.0 mAdc, VQS • 01
mAdc
'DSS
2N4866.A, 2N4859.A
2N4867.A, 2N4880.A
2N4868.A, 2N4861.A
50
20
8.0
100
30
Vdc
VDS(on)
2N48S6,A. 2N4859.A
2N4867.A. 2N4860.A
2N4868.A, 2N4861.A
-
075
0,5
0.5
-
25
40
60
-
18
I
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Reiiitence
(VQS - 0, ID " 0, f - 1.0 kHz!
Ohm
'ds(on)
2N4856A 2N4859A
2N4867.A. 2N4860A
2N4858A, 2N4861A
Input Capacitance
(Vos - 0, VQS - ~ 10 Vdc, f - 1.0 MH2| 2N4856 thru 2N4881
2N4866A thru 2N486IA
Ci,,
Reverse Transfer Capacitance
(Vos - 0, VGS - - 'O Vdc, f » 1.0 MHz) 2N4856 thru 2N4861
2N4B56A, 2N4869A
2N4857A, 2N4868A, 2N i860A, 2N4881A
Crsa
10
,
:
;
PF
•
PF
8.0
4.0
-'
35
N.I Semt-C (inductors reserves the right to chunge test conditions, parameter limits and packuge dimensions without notice
Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable .it the lime of going to press. However N.I
Seini-CoiiJuclors assumes no responsibility tor any errors or omissions discovered in its use NJ Semi-t onducturs encourages
custi:niers to verih (rut datasheets are current before placing orders
ELECTRICAL CHARACTERISTICS (continual ITA » 25'C unless otherwlte noted.)
Ch»rt«tirlitk
Forward Trantconducunct
(V0s " IB V, VQS - 0, 1 - 400 MMil
Symbol
•
Max
'
c iss
'•rss
Unit
4.5
pf
_
10
Pf
-
3.0
rnrriho
iMlViJl
(100 MHz)
(400 MHj)
L
^mho»
4000
2500
4000
2N6245
2NS241
2N6247
Input Capicitanct
IVos " 15 V, Vgs • 0. ( • 1.0 Mhi)
R»varie Trtnifer Capacitance
(VDS - 16 V. VQS " 0. ( • 1.0 MHz)
Input Sutcsptenca
(Vos - K V, VQS - 0)
Mln
B«<Yfi)
12.0
FUNCTIONAL CHARACTERISTICS
NF
Noll* Flgurt
(VDS . 15 V, ID " 5.0 mA, R'Q - 1.0 M)>
Common Sourco Power Giln
(Vos - !• V, ID - 6.0 mA. fl'G - I'D km
Output Susctptinci
(VDS • 1B v- VGS - 01
Gps
2N5246 (100 MHi)
2N5246 (400 MHlt
20
4.0
ie
...
dB
10
IM<YOII
HOC MHil
(400 MHz)
dB
-
-
1000
4000
Mmho