BFW10 - New Jersey Semiconductor

tSsmi-Conducto'i ZPtoctucta.,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: 1973) 376-8960
BFW10
BFW11
IU-72 (TO-ZO8A)
30JIB
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gete Voltage
Reverse Gete-Source Voltage
Forward Gata Current
Symbol
Value
Unit
VDS
VDG
30
30
-30
10
300
Vdc
Vdc
Vdc
mAdc
mW
1.71
-65 to +150
mW/"C
VGSR
Total Device Dissipation 8 TA 26°C
Derate above 2 5°C
Operating and Storage Junction
Temperature Range
IGF
PD
Tj, Tjlg
"'""Vlll/
JFET
VHF/UHF AMPLIFIER
N-CHANNEL - DEPLETION
«c
ELECTRICAL CHARACTERISTICS (TA - 26°c unless otherwise noted.)
[ Symbol
Characttrtatio
L
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
|lG = 10 uAdc. VDS " 0|
Gate-Source Cutoff Voltage
(VDS = 15 Vdc, ID = 0.5 nAdc)
Gate Reverse Current
1 Mln
Gate-Source Voltage
IVDS - IB Vdc, ID = 400 |iAdcl
Gate-Source Voltage
(VDS -15 Vdc, ID - 50 MAdc)
ON CHARACTERISTICS
Typ
|
Max
|
Unit
—
—
Vdc
—
—
8
Vdo
IGSS
—
—
0.1
nAdc
VGS
2
—
7.5
Vdc
VQS
1.25
—
4
Vdc
loss
8
4
—
20
10
mAdc
Yfs
3.6
3.0
—
YOB
—
6.6
6.5
85
60
mmhos
—
Clss
-~
—
5.O
PF
pF
nVQS(off)
(VGS - 20 vdc, VDS = 01
|
30
V(BR|GSS
BFW10
BFW11
'"
Lu™
/
e
I
BFW10
BFWII
Zero-Gate Voltage Drain Current
BFW10
(Vos - 15 Vdc, VQS - 0)
BFW1 1
SMALL-SIQNAL CHARACTERISTICS
Forward Transadmitta nee
BFW10
BFW11
8FW10
BFW11
(VDS - 15 Vdc. VGS = 0. 1 = 1 kHz)
Output Admittance
(VDS = 15 Vdc. VQS = 0. f = 1.0 kHj)
Input Capacitance
(VDS - is vdc. VGS = ° vdc. f - 1.0 MHZ)
Reverse Transfer Capacitance
Crss
—
—
0.8
Yfs
3.2
—
—
mmhos
en
—
—
75
nV/vfj5
NF
—
_
2.5
JB
(VDS = 16 Vdc, VGS = 0 Vdc. f •= 1.0 MHz)
Forward Trensadmlttanca
(Vos = 16 vdc, VGS - o, f - 200 MHZ)
Equivalent Noise Voltage
(VDS = 16 vdc. VGS - o, f - 25 HI)
Noise Figure
IVDS = 16 Vdc. VQS = 0 V. see Figures 1. 2. 31
limhos
FIGURE 1 - 100 MHi and 400 MHz NEUTRALIZED TEST CIRCUIT
Rftforanca
Detignitlon
400MHz
1.8 PF
17 pF
1.0 PF
C4
1-UpF
C9
L2
1-12 pF
C.001B/1F
0.0016 (IF
3.0 14H'
0.16 JlH*
L3
0.14 /<H'
O.B-B.OpF
0.8-B.OpF
0.001 UF
0.001 IIP
0.2|iH»»
0.03 pH"
0.032 MH * •
ei
TO soon
C2
C3
eg
* l o - 5.0mA
C7
LI
Adlui) VQ S for
10- fiomA
Vos< 0 Volw
Thn nolM tourM it • hot-cold body
(AIL tYP* 70 or .quiu.l.nll with •
t«itrBeeiv*f (AIL typ* 136 or •qulvatontt.
17 turn*, (approx. - d«p*ndt upon circuit layout) AYVO #2fl
•nirrwlvd coppor wlra, cloM wound on 9/32" cframlc coll
fcrrpir Tuning provided by a powdirtd iron »lug.
A-l/2 lumi, AWG #1H «nam«led coopvr wtra. 6/16" long.
3/B" I.D. (AIR CORE).
31/2 tumt, AWO #18 «o«m»l«<t cappar wJra. 1/d" long,
3/8" I.O. (AIR CORE),
VALUE
100MHz
7.0 pF
1000 DF
3.Off
6 turnt, lipprox. — d«p»ndi upon circuit layout) AWO #24
•n*m«l«d copper wir*. ctot* ovound on 7/37" car»mie edil
form. Tuning provided by an •lumlnum ilug.
1 turn, AWQ #16 enameled topper wire, 3/8" I.D. (AIR
CORE).
1/3 turn. AWO #16 •normled copp.r wire. 1/4" I.D. (AIR
cone),
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
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