^Etni-Conduatoi ZPioaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF148A Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.) Efficiency: 40% (Typ.) • 100% tested for load mismatch at all phase angles with 30:1 VSWR Lower reverse transfer capacitance (3.0 pF typ.) • CASE 211-07, MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDSS 120 Vdc Dram-Gate Voltage VDGO VGS ID PD 120 Vdc ±40 Vdc Rating Gate-Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 26CC Derate above 25°C Storage Temperature Range Operating Junction Temperature 6.0 Adc 115 0.66 Watts W/°C Tstg -65 to +150 °c Tj 200 °C Symbol Max Unit Rejc 1.52 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance., Junction to Case NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without I" "ss £T?rS"^rb>HN'rSemi-C°nto is «*"«* * * both accurate -L reliable at the tL o?go ng to press However, NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use N.I VmK onductors enconntges customers to verify that datasheets are current before placing orders. ELECTRICAL CHARACTERISTICS (Tc = 255C unless otherwise noted.) Symbol Win V(BR)DSS 125 IDSS IGSS Gate Threshold Voltage (Vps = 10 V, ID = 10 mA) Drain-Source Orv-Voltage (VQS = 10 V, ID = 2.5 A) Characteristic Max Unit — Vdc OFF CHARACTERISTICS — — — — — 1.0 rnAdc 100 nAdc VQS(th) 1.0 2.5 5.0 Vdc vDS(on) 1.0 3.0 5.0 Vdc 9fs 0.8 1.2 — mhos Input Capacitance (V0S = 50 V, VGS = 0, f = 1 .0 MHz) C1SS — 62 — PF Output Capacitance (VDS = 50 V, VGS = 0, f = 1 .0 MHz) Coss — 35 — PF Reverse Transfer Capacitance (VQS = 50 V, VQS = 0. f = 1 .0 MHz) Crss — 3.0 — PF Gps — 18 15 — 11 — 40 50 — Drain-Source Breakdown Voltage (VQS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (Vfjs = 50 V, VQS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) ON CHARACTERISTICS Forward Transconductance (VDS = 1 0 V, ID = 2.5 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (30 MHz) <VDD = so v, Pout = 30 w (PEP), IDQ = 1 oo mA) Drain Efficiency (VDD = 50 v, f = so MHZ. IDQ = 1 oo mA) (175 MHZ) (30 W PEP) Intermodulation Distortion (VDD = 50V.POU1 = 30W(PEP), f = 30; 30.001 MHz. IDQ = 100 mA) Load Mismatch (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz. IDQ = 100 mA, VSWR 30:1 at all Phase Angles) (30 w cw) dB % dB IMD(d3) IMD(dH) — -35 -60 = V No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = so v, p^ = 10 w (PEP), n = 30 MHZ. 12=30.001 MHz. IDQ = 1.0 A) GPS IMD(d3) IMO(d9-l3) NOTE: I To MIL-STD-1311 Version A, Test Method 2204B, Two Tone. Reference Each Tone. — — — 20 -50 -70 — — — dB