TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6901 ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain — Source Voltage VDS 1 00 Vdc Gate - Source Voltage Continuous Drain Current Vos ± 10 Vdc ID, 1. 69 Adc ID2 1.07 Adc Pti 8.33'" W Rdsfon) 1.4 i:) Q Top, Tstg -55 to +150 °C TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature 2N6901 (formerly TO-39) Note: (1) Derated Linearly by 0.067 W/°C for Tc > +25°C (2) Vos = 5Vdc, ID = l'.07A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)DSS 100 V G S(lh)l 1.0 0.5 Max. Unit OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = OV, I D =-lmAdc Gate-Source Voltage (Threshold) VDS > VGS, ID = 1.0mA VDS > VGS, ID = 1 .OmA, T, = +125°C VDS > VGS, ID = 1.0mA, T, = -55°C Gate Current VGS = ±10V,V DS = OV Vos = ±10V, VDS = 0V, T, = +125°C Drain Current VGS = 0V. VDS = 80V VGs = 0V, VDs = 80V, Tj = +125°C Static Drain-Source On-State Resistance VGS = 5V, I D = 1.07A pulsed VGS = 5V, ID =1.07A pulsed Diode Forward Voltage V G S =OV, I D = 1.69A pulsed VoSithC V G Sfth)3 Vdc 2.0 Vdc 3.0 IGSSI less? ±100 ±200 nAdc IDS si loss? 1.0 50.0 uAdc uAdc rDS( on)1 1.4 Q rDS< on)2 2.6 Q 1.6 Vdc VSD 0.8 NJ Semi-Conductors reserves the right to change test conditions, parnmeter limits :md package dimensions without notice. Information, furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verirv th;it datasheets tire current before placing orders DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Dram Charge Symbol _ ,y , _ . „. °s ,' D DS ~ Min. Qg(on) Max. Unit 5.0 1.0 2.9 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Symbol I D =1.69A,V G S = 5Vdc, Gate drive impedance = 25Q, VDD = 50Vdc di/dt < 100 A/us, VDD < 30V, I F = l.OA Diode Reverse Recovery Time Min. Max. tr 25 80 45 80 trr 250 tr td(off) Unit ns ns •CDf* nr ^ cH P t Q t i rf 4 i 1 I Symbol CD CH HD LC LD LL LU LI L2 P h h ui n \ LU U L ^ u 1f SEATING PLANE --LD Q DRAIN (CASE) GATEO—' O SOURCE TN TL-*- - SCHEMATIC CIRCUIT TL TW r a Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 4.07 4.57 .160 .180 .370 8.51 9.40 .335 5.08 TP .200 TP .021 0.53 .016 0.41 .750 12.70 .500 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .045 1.14 .029 0.74 .028 .034 0.71 0.86 .010 0.25 45° TP 45° TP 8,9 8,9 8,9 8,9 8,9 6 5 4 3 10 6