<~>c.mL- Conductor 5P^ocluct*., Una, TELEPHONE: (201) 378-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N1671B Silicon Unijunction Transistors *ALl LEADS INSULATED FROM CASE. •otmwt ..Ml (> U-*| MM. C NOTES A. This zone is controlled for automatic handling. The variation in actual diamclcrwilhin this zone shall, not exceed 0.010. B. Measured (ram mai, diameter ol the actual device. C. The specified lead diameter applies in the tone between 0.050 and 0.250 from the base seal. Between O.ZJOand 1.5maximum of 0.021 diam> eter is held. Outside of these zones the lead diameter is not controlled. DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED. absolute maximum ratings (25°C) RMS Power Dissipation RMS Emitter Current Peak Emitter Current Emitter Reverse Voltage Intcrbnsc Votlngo Operating Temperature Range Stornjro Triupornture Rnnga 450 mw 50 ma 2 nm pores 30 'volts .35 volts -OB'C-to + 140'C -fifi'C to +160*0 electricar characteristics (25°C) PARAMETER Intrinsic StnndofT Ratio (V,. = 10V) Interbasc Resistance (Vn» = 3V, In = 0) Emitter Saturation Voltage (V P , = 10V, IK =.50 ma) Modulated Interbasc Current (V»p = 10V, IK = 50 ma) Emitter Reverse Current (Vm* = 30V, Im = 0) Peak Point Emitter Current (V» = 25V) Valley Point Current (Vf, = 20V, R« = 1000) Base-One Peak Pulse Voltage Quality Semi-Conductors SYMBOL MIN. MAX. t 0.47 4.7 RkRA VK(SAT) U(MOD) 0.8 Ir I» v,,», O.C2 0.1 Kfl 5 voll» 22 0.2 0 IKII 8 3.0 UNITS ma /«» /«« ma volU