2SK1298 Silicon N Channel MOS FET REJ03G0918-0200 (Previous: ADE-208-1256) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate 2. Drain 3. Source G S 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 2SK1298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Ratings 60 Unit V VGSS ID ±20 40 V A 160 40 A A ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 50 150 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Tstg –55 to +150 W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 60 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±20 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 1.0 — — 250 2.0 µA V VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — — 0.015 0.02 0.018 0.025 Ω Ω ID = 20 A, VGS = 10 V * 3 ID = 20 A, VGS = 4 V * Forward transfer admittance Input capacitance |yfs| Ciss 22 — 35 3600 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 1850 450 — — pF pF ID = 20 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time Rise time td(on) tr — — 30 170 — — ns ns Turn-off delay time Fall time td(off) tf — — 700 350 — — ns ns Body to drain diode forward voltage Body to drain diode reverse recovery time VDF trr — — 1.2 155 — — V ns Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 20 A, VGS = 10 V, RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/µs 2SK1298 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 O pe tio 2 Operation in this area is limited by RDS (on) 1.0 Ta = 25°C 0.5 0.1 0.3 1.0 3 ) n 5 ot ra Sh 10 1 Drain Current ID (A) C s( (T C = 25 °C 10 ) 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 4.5 V 5V 100 Pulse Test 4V 60 Drain Current ID (A) 10 V 8V 3.5 V 40 3V 20 VGS = 2.5 V 2 4 6 8 VDS = 10 V Pulse Test 80 60 40 75°C TC = 25°C –25°C 20 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2.0 Pulse Test 1.6 1.2 ID = 50 A 0.8 0.4 20 A 10 A Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) µs m s Case Temperature TC (°C) 80 0 D 20 0 150 1 m 100 50 µs 10 100 50 100 = 20 10 40 0 Drain to Source Saturation Voltage VDS (on) (V) 10 200 PW Channel Dissipation Pch (W) 60 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 0.02 10 V 0.01 0.005 0 2 4 6 8 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 10 2 5 10 20 50 Drain Current ID (A) 100 200 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1298 0.05 0.04 Pulse Test 0.03 ID = 50 A 10 A, 20 A VGS = 4 V 0.02 50 A 10 A, 20 A VGS = 10 V 0.01 0 –40 0 40 80 120 160 –25°C TC = 25°C 75°C 10 5 2 VDS = 10 V Pulse Test 1.0 1.0 0.5 2 5 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) 200 100 50 20 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 10 5 2 10 100 20 0 50 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 12 VDS VGS 8 50 V 25 V VDD = 10 V 40 80 ID = 40 A 120 160 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 4 0 200 1000 td(off) Switching Time t (ns) 16 VDD = 10 V 25 V 50 V 20 0 Crss Reverse Drain Current IDR (A) 80 40 Coss 1000 10 1.0 100 60 50 VGS = 0 f = 1 MHz Ciss 5 0.5 20 10 Drain Current ID (A) Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 20 Case Temperature TC (°C) 500 Drain to Source Voltage VDS (V) 50 tf 500 200 tr 100 50 td(on) • VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 % • 20 10 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1298 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 Pulse Test 80 60 5V 10 V 40 20 VGS = 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γs (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 θch–c (t) = γs (t) • θch–c θch–c = 2.50°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.02 0.01 0.03 0.01 10 µ 1S h ul ot P se T 100 µ 1m 1 100 m 10 m D =PW T PW 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Ω Vin = 10 V Rev.2.00 Sep 07, 2005 page 5 of 6 . VDD =. 30 V td (on) 10 % 90 % tr 10 % 90 % td (off) tf 2SK1298 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-93 PRSS0003ZA-A TO-3PFM / TO-3PFMV 5.2g 4.0 ± 0.3 2.6 0.86 5.0 ± 0.3 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 5.5 ± 0.3 21.0 ± 0.5 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 5.0 ± 0.3 19.9 ± 0.3 15.6 ± 0.3 Unit: mm + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Part Name 2SK1298-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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