RENESAS H7N0607DL

H7N0607DL, H7N0607DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0124-0300
Rev.3.00
Jan.27.2005
Features
• Low on-resistance
RDS(on) = 26 mΩ typ.
• Low drive current.
• Capable of 4.5 V gate drive
Outline
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D
4
4
G
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
H7N0607DS
S
1 2
3
H7N0607DL
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.3.00, Jan.27.2005, page 1 of 8
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Note3
IAP
EAR Note3
PchNote2
Tch
Tstg
Rating
60
±20
20
80
20
8
5.48
25
150
–55 to +150
Unit
V
V
A
A
A
A
mj
W
°C
°C
H7N0607DL, H7N0607DS
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source break down voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cut off voltage
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer admittance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-off delay time
Rise time
Body-drain diode forward voltage
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Min
60
±20
—
—
1.5
—
—
11
—
—
—
—
—
—
—
—
—
tf
VDF
trr
—
—
—
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Rev.3.00, Jan.27.2005, page 2 of 8
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Typ
—
—
—
—
—
26
40
18
1100
160
90
21
4
5
20
90
65
Max
—
—
±10
10
2.5
34
56
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
15
0.93
25
—
—
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4.5 VNote4
ID = 10 A, VDS = 10 VNote4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 20 A
VGS = 10 V, ID = 10 A
RL = 3.0 Ω
Rg = 4.7 Ω
IF = 20 A, VGS = 0Note4
IF = 20 A, VGS = 0
diF / dt = 100 A / µs
H7N0607DL, H7N0607DS
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
PW
30
40
Drain Current ID (A)
Channel Dissipation
Pch (W)
50
30
20
10
10
10
1m
m
1
pe
ra
3
=
Operation in
this area is
limited by RDS(on)
0.3
)
(T
c
1
sh
ot
tio
n
s
s
s(
O
0µ
25
°C
)
0.1
0.03
0
50
100
Case Temperature
150
Tc (°C)
0.01 Ta = 25°C
0.1 0.3
1
200
VGS = 10 V
4.5 V
4V
Drain Current ID (A)
5.0 V
20
30
100
VDS (V)
Typical Transfer Characteristics
Pulse Test
30
10
50
6.0 V
40
3
Drain to Source Voltage
Typical Output Characteristics
50
Drain Current ID (A)
=
D
C
10 µs
10
VDS = 10 V
Pulse Test
40
Tc = –40°C
25°C
30
150°C
20
3.5 V
10
10
2V
2
4
6
8
Drain to Source Voltage
VDS (V)
VDS(on) (mV)
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.3
Pulse Test
0.4
ID = 10 A
0.2
5A
0.1
2A
0
12
4
8
Gate to Source Voltage
Rev.3.00, Jan.27.2005, page 3 of 8
0
10
16
VGS
20
(V)
2
4
6
8
Gate to Source Voltage
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Drain to Source On State Resistance
RDS(on) (mΩ)
0
300
100
VGS = 4.5 V
30
10 V
10
3
1
0.1
1
0.3
3
Drain Current
10
ID
30
(A)
100
H7N0607DL, H7N0607DS
80
ID = 10 A
60
5A
2A
4.5 V
40
2, 5, 10 A
20
VGS = 10 V
0
–50
0
50
100
150
Case Temperature
Tc
100
Tc = –40°C
10
25°C
150°C
1
VDS = 10 V
Pulse Test
0.1
200
1
Capacitance C (pF)
3000
30
10
3
0.3
1
3
Reverse Drain Current
10
30
IDR
100
(A)
Ciss
1000
300
Coss
100
Crss
30 VGS = 0
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
60
VDS
40
20
0
12
8
VDD = 50 V
25 V
10 V
10
20
30
40
Gate Charge Qg (nc)
Rev.3.00, Jan.27.2005, page 4 of 8
4
0
50
(V)
t (ns)
VDD = 50 V
25 V
10 V
16
VGS
VGS
1000
Switching Time
Drain to Source Voltage
VDS
(V)
ID = 30 A
80
Switching Characteristics
20
Gate to Source Voltage
100
(A)
10000
100
1
0.1
ID
Typical Capacitance vs.
Drain to Source Voltage
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
300
100
10
Drain Current
(°C)
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
tr
300
td(off)
100
tf
30
10
td(on)
tf
tr
3
1
0.1
VGS = 10 V, VDS = 30 V
PW = 5 µs, duty < 1 %
Rg = 4.7 Ω
0.3
3
1
Drain Current
10
30
ID (A)
100
H7N0607DL, H7N0607DS
Maximum Avalanche Energy vs.
Channel Temperature Derating
10 V
20
15
5V
10
VGS = 0, –5 V
5
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
(mJ)
Reverse Drain Current
IDR (A)
25
8.0
Repetitive Avalanche Energy EAR
Reverse Drain Current vs.
Source to Drain Voltage
6.4
IAP = 8 A
VDD = 25V
duty < 0.1 %
Rg > 50 Ω
4.8
3.2
1.6
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
(V)
Tc = 25°C
D=1
3 0.5
1
0.2
0.1
0.3
0.05
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/ W, Tc = 25°C
0.02
0.1 0.01
ho
t
PDM
0.03
D=
1s
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Avalanche Test Circuit
V DS
Monitor
1
10
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
Rev.3.00, Jan.27.2005, page 5 of 8
VDD
H7N0607DL, H7N0607DS
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30V
10%
90%
td(on)
Rev.3.00, Jan.27.2005, page 6 of 8
10%
tr
10%
90%
td(off)
tf
H7N0607DL, H7N0607DS
Package Dimensions
• H7N0607DL
RENESAS Code
Previous Code
MASS[Typ.]

PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
Unit: mm
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H7N0607DS
RENESAS Code
Previous Code
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.3.00, Jan.27.2005, page 7 of 8
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H7N0607DL, H7N0607DS
Ordering Information
Part Name
H7N0607DL
H7N0607DSTL
H7N0607DL-E
H7N0607DSTL-E
Quantity
100 pcs
3000 pcs
100 pcs
3000 pcs
Shipping Container
Sack
Taping
Sack
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00, Jan.27.2005, page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0