2SD2662 Transistors Low frequency amplifier 2SD2662 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) (1)Base (2)Collector (3)Emitter ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89 Abbreviated symbol : FZ zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg Limits 30 30 6 1.5 3 500 150 −55~+150 Unit V V V A A∗ mW °C °C Package Type Taping Code T100 Basic ordering unit (pieces) 1000 2SD2662 ∗Single pulse, PW=1ms zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut off current Emitter cut off current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 160 − 330 11 Max. − − − 100 100 350 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1A, IB=50mA VCE=2V, IC=100mA ∗ VCE=2V, IE=−100mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SD2662 Transistors DC CURRENT GAIN : hFE Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current VCE=2V Pulsed Ta=100°C 0.1 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 Ta=25°C Ta=−40°C 0.01 0.001 0 0.5 1 1.5 Ta=−40°C Ta=25°C Ta=100°C VBE(sat) 0.1 Ta=100°C VCE(sat) Ta=25°C Ta=−40°C 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 1 Ta=25°C Pulsed 0.1 IC/IB=50/1 IC/IB=20/1 IC/IB=10/1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1000 1000 Ta=25°C VCE=2V f=100MHz 100 Ta=25°C VCE=5V f=100MHz tstg 100 tf tdon 10 tr 0.1 1 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IC/IB=20 =20/1 Pulsed 1 10 0.01 BASE TO EMITTER CURRENT : VBE (V) 1000 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V Pulsed Ta=100°C SWITCHING TIME : (ns) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves 10 1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Switching time Ta=25°C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2