FML9 Transistors General purpose transistor (isolated transistor and diode) FML9 A 2SB1689 and a RB461F are housed independently in a UMT package. !External dimensions (Units : mm) !Applications DC / DC converter Motor driver 2.9 1.1 (3) (4) 0.95 0.95 1.9 (5) (1) !Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.8 (2) 0.3 FML9 1.6 0.3Min. 0~0.1 0.15 2.8 Each lead has same dimensions !Structure Silicon epitaxial planar transistor Schottky barrier diode ROHM : SMT5 EIAJ : SC-74A !Equivalent circuit (3) (4) Di2 (2) (5) Tr1 (1) !Packaging specifications Type FML9 Package SMT5 Marking Code TR Basic ordering unit(pieces) 3000 L9 1/4 FML9 Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Limits −15 −12 −6 −1.5 −3 200 150 −40~+125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP Power dissipation Pc Junction temperature Tj Range of storage temperature Tstg Unit V V V A A mW °C °C ∗1 ∗2 ∗1 Single pulse, Pw=1ms. ∗2 Each terminal mounted on a recommended land. Di2 Parameter Symbol Average rectified forward current IF Forward current surge peak (60HZ, 1∞) IFSM Reverse voltage (DC) VR Junction temperature Tj Range of storage temperature Tstg Limits 700 3 20 125 −40~+125 Unit mA A V °C °C !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −110 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−1mA IC=−10µA IE=−10µA VCB=−15V VEB=−6V IC=−500mA, IB=−25mA VCE=−2V, IC=−200mA VCE=−2V, IE=200mA, f=100MHz VCB=−10V, IE=0mA, f=1MHz Di2 Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF IR − − − − 490 200 mV µA Conditions IF=700mA VR=20V 2/4 FML9 Transistors !Electrical characteristic curves Ta=100°C VCE=−2V Pulsed Ta=25°C Ta=−40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. 10 IC/IB=20/1 VCE=−2V Pulsed Ta=100°C VCE(sat) Ta=100°C Ta=25°C 0.01 Ta=−40°C 0.001 0.001 0.1 1 10 Ta=100°C 0.1 Ta=25°C Ta=−40°C 0.01 0 0.5 1 0.1 IC/IB=50/1 0.01 IC/IB=20/1 IC/IB=10/1 0.001 0.001 0.01 0.1 1 10 Fig.3 Collector-emitter saturation voltage 10000 Ta=25°C Ta=25°C VCE=−2V f=100MHz VCE=−5V f=100MHz 100 1000 100 tstg tf 10 tdon tr 10 0.001 1.5 Pulsed SWITCHING TIME : (ns) 1 Ta=25°C vs. collector current 1000 VCE=−2V Pulsed 1 COLLECTOR CURRENT : IC (A) vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Base-emitter saturation voltage 10 BASE TO EMITTER CURRENT : VBE(on) (V) Fig.4 Grounded emitter propagation 0.01 0.1 1 10 1 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Switching time characteristics 10 vs. emitter current 1000 10 Ta=25˚C IE=0mA f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VBE(sat) 0.1 collector current 0.001 Ta=−40°C Ta=25°C 1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) Tr1 Ta=25°C Single Pulsed 1ms 1 10ms PW=100ms 0.1 DC Operation 0.01 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operation area vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 FML9 Transistors Di2 1000m REVERSE CURRENT : IR (A) 100m 1 °C 25 100m =1 25 °C 10m Ta =− 25 °C Ta Ta = FORWARD CURRENT : IF (A) 10 1m 0.1m Ta=125°C 10m 1m 100µ Ta=25°C 10µ 1µ Ta=−25°C 0.1µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.9 Forward characteristics Fig.10 Reverse characteristics 70 4/4