RB055LA-40 Diodes Schottky barrier diode RB055LA-40 zApplications General rectification zLand size figure (Unit : mm) zExternal dimensions (Unit : mm) 1.4 4.7±0.3 ① 3.8±0.2 4.4 1.4 zFeatures 1) Small power mold type (PMDT) 2) Low VF 3) High reliability 2.0 0.2±0.15 0.1 2.6±0.2 PMDＴ zStructure Silicon epitaxial planar zStructure 1.5±0.2 0.95±0.1 ROHM : PMDＴ Manufacture Date ① zTaping dimensions (Unit : mm) φ1.55±0.1 0 5.0±0.1 12.0±0.2 5.0±0.1 1.75±0.1 0.25±0.05 5.5±0.05 2.0±0.05 4.0±0.1 φ1.55±0.1 0 4.0±0.1 2.7±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits Symbol VRM 40 VR 40 3 Io IFSM 70 150 Tj -55 to +150 Tstg (*1)Tc=80℃max Mounted on epoxy board. 160°Half sine wave Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 Min. - Typ. - Max. 0.55 Unit V VF2 - - 0.62 V IR - - 100 µA Conditions IF=1.5A IF=3.0A VR=40V 1/3 RB055LA-40 Diodes zElectrical characteristic curves Ta=150℃ Ta=-25℃ Ta=25℃ 10 1 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 10 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 700 10 20 30 0 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 560 550 AVE:559.1mV 540 530 80 70 60 50 40 30 AVE:6.01uA 20 360 350 340 330 320 0 300 AVE:333.1pF IR DISPERSION MAP Ct DISPERSION MAP 8.3ms 150 100 AVE:117.2A 50 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=20pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 200 370 310 30 250 380 10 VF DISPERSION MAP 300 15 10 AVE:4.43ns 5 0 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 Ifsm t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 3.5 Rth(j-a) 100 100 D=1/2 DC 3.0 Rth(j-c) 10 IM=100mA IF=３A 1 1ms tim 2.5 2.0 1.5 Sin(θ＝180) 1.0 0.5 300us 0.1 0.001 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 4.0 Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 30 Ta=25℃ f=1MHz VR=0V n=10pcs 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 570 Ta=25℃ VR=40V n=30pcs 90 REVERSE CURRENT:IR(uA) Ta=25℃ IF=3A n=30pcs 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 100 580 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 100 0.1 FORWARD VOLTAGE:VF(mV) 1000 1000 Ta=125℃ 1000 Ta=125℃ 10000 Ta=150℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 10000 0.0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RB055LA-40 Diodes 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 5 4.5 1.2 1 DC 0.8 D=1/2 0.6 0.4 0.2 Sin(θ＝180) 0 4 t 3.5 DC 3 2.5 D=1/2 VR D=t/T VR=20V T Tj=150℃ Sin(θ＝180) 2 1.5 1 0.5 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 4 D=1/2 3.5 DC 3 Sin(θ＝180) 2.5 2 1 t 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Io 0A 0V 1.5 0.5 0 0 4.5 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.4 0 VR D=t/T VR=20V T Tj=150℃ 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 AVE:11.5kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1