RF501PS2S Diodes Fast recovery diode RF501PS2S (5) 0.5 1.1 0.15 ① 0～0.1 6±0.1 5±0.1 4.56 (1) (2) (3) (4) 1.27 0.75 ＋0.1 0.22－0.05 0.4 ＋0.1 －0.05 TSOP8 0.9±0.05 5.0±0.1 zConstruction Silicon epitaxial planar 6.6 (6) 4.7 (7) 0.5 (8) zFeatures 1) High power mold type (TSOP8) 2) Low VF 3) Very fast recovery 4) Low switching loss zLand size figure zExternal dimensions (Unit : mm) 0.5 zApplications General rectification zStructure ROHM : TSOP8 ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 8.0±0.1 φ1.55±0.1 0 0.37±0.1 5.55±0.2 12.0±0.3 5.5±0.05 9.5±0.1 0～0.5 5.55±0.2 1.75±0.1 4.0±0.1 1PIN φ1.55±0.05 6.7±0.2 1.2±0.2 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 200 200 5 70 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR trr Min. - Typ. 0.86 0.02 14 Max. 0.92 1 30 Unit V µA ns Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 RF501PS2S Diodes zElectrical characteristic curves Ta=150℃ Ta=125℃ 10000 10 1000 f=1MHz 1 Ta=125℃ 0.1 Ta=25℃ Ta=75℃ Ta=-25℃ 0.01 1000 0.001 0 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 AVE:859.4mV AVE:856.6mV 80 70 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 860 850 Ta=25℃ Ta=25℃ VR=200 VR=200V V n=30pcs n=30pcs 90 870 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 200 100 880 10 1 0 890 Ta=25℃ Ta=25℃ IF=3A IF=5A n=30pcs n=30pcs 100 0.1 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=150℃ 60 50 40 AVE:10.7nA AVE:4.60nA 30 20 Ta=25℃ f=1MHz VR=0V n=10pcs 190 180 170 AVE:174.9pF 160 10 840 150 0 VF DISPERSION MAP IR DISPERSION MAP 8.3ms 200 150 AVE:167.0A 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 250 15 10 AVE:14.5ns 5 0 1000 t 100 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 Mounted on epoxy board IM=100mA 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 IF=2.5A 8 100 1ms time 300us Rth(j-a) 10 Rth(j-c) 1 0.001 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 10 10 trr DISPERSION MAP 1000 1 8.3ms 8.3ms 1cyc 100 1 0 IFSM DISRESION MAP PEAK SURG E FORWARD CURRENT:IFSM(A) 1000 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWA RD CURRENT:I FSM(A) 300 Ct DISPERSION MAP D=1/2 6 Sin(θ＝180) 4 DC 2 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 2 4 6 8 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 RF501PS2S Diodes 6 DC T VR D=t/T VR=100V Tj=150℃ 4 Sin(θ＝180) 2 8 T VR D=t/T VR=100V Tj=150℃ ELECTROSTATIC DISCHARGE TEST ESD(KV) t D=1/2 t DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0A 0V 8 Io 0A 0V 10 10 D=1/2 6 4 Sin(θ＝180) 2 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 No break at 30kV No break at 30kV 25 20 15 10 5 0 0 0 30 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1