RB081L-20 Diodes Schottky barrier diode RB081L-20 z Land size figure (Unit : mm) z External dimensions (Unit : mm) zApplications General rectification 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 0.1 PMDS zStructure 2.0±0.2 1.5±0.2 zConstruction Silicon epitaxial planar 5.0±0.3 9 4.5±0.2 3 1.2±0.3 4.2 zFeatures 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. ROHM : PMDS JEDEC : SOD-106 ① ② Manufacuture Date z Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 0.3 12±0.2 5.5±0.05 5.3±0.1 0.0 5 9.5±0.1 1.75±0.1 φ1.55±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io Forward current surge peak （60Hz・1cyc） IFSM Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxy board. 180°Harf sine wave Unit V V A A ℃ ℃ 25 20 5 70 125 -40 to +125 zElectrical characteristics (Ta=25°C) Parameter Conditions Forward voltage Symbol VF Min. - Typ. - Max. 0.45 Unit V IF=0.5A Reverse current IR - - 700 µA VR=20V Rev.B 1/3 RB081L-20 Diodes zElectrical characteristic curves (Ta=25°C) 10 1000000 1000 Ta=25℃ 0.1 Ta=-25℃ 0.01 100000 Ta=75℃ 10000 Ta=25℃ 1000 100 Ta=-25℃ 10 0.001 200 400 600 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 1000 390 380 370 360 800 700 600 500 400 300 200 AVE:380.3mV 100 350 930 920 910 900 890 880 870 850 Ct DISPERSION MAP 300 150 100 50 AVE:196.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 8.3ms 8.3ms 1cyc 200 150 15 100 10 AVE:11.7ns 5 0 Ifsm 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 200 RESERVE RECOVERY TIME:trr(ns) 30 1cyc Ifsm 250 AVE:898.1pF 860 AVE:201.3uA IR DISPERSION MAP 300 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 1000 Ifsm 250 t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 5 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IF=1A IM=100mA 1 1ms 4 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 940 0 VF DISPERSION MAP 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 950 Ta=25℃ VR=20V n=30pcs 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=5A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1 0 f=1MHz Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ D=1/2 3 DC Sin(θ＝180) 2 1 time 300us 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 10 2/3 RB081L-20 Diodes 2 10 10 Sin(θ＝180) DC 1 D=1/2 0.5 8 t 7 T 6 DC 5 VR D=t/T VR=10V Tj=125℃ D=1/2 4 Sin(θ＝180) 3 2 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS t 8 7 T D=1/2 6 VR D=t/T VR=10V Tj=125℃ - 5 4 3 Sin(θ＝180) 2 0 0 0 Io 0A 0V DC 1 1 0 9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 1.5 Io 0A 0V 9 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 AVE:24.8kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1