RB160A60 Diodes Schottky barrier diode RB160A60 zApplications General rectification zExternal dimensions (Unit : mm) φ0.4±0.1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low VF. 4) High ESD. 2.7±0.3 T-31 29±1 T-31 29±1 φ1.8±0.2 ROHM : MSR ① zConstruction Silicon epitaxial planar ② Manufacture Date zTaping specifications (Unit : mm) BROWN H2 A Symbol BLUE E Standard dimension value(mm) T-31 52.4±1.5 +0.4 T-32 26.0 0 T-31 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN Ａ B C L2 L1 F H1 D zAbsolute maximum ratings (Ta=25°C) Parameter R everse voltage (repetitive peak) Re verse voltage (DC) A verage rectified forward current (*1) For ward current surge peak （t=100µs） Junct ion temperature S torage temperature Limits 60 60 1 60 150 -55 to +150 Symbol VRM VR Io IFSM Tj Tstg Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current ESD break down voltage Symbol VF IR ESD Conditions Min. 0.4 Typ. 0.5 Max. 0.55 Unit V 20 7.00 - 50 - µA IF=1.0A VR=60V kV C=100pF,R=1.5kΩ, forward and reverse : 1 times Rev.A 1/3 RB160A60 Diodes zElectrical characteristic curves 1 10000 Ta=-25℃ 0.01 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 100 10 0.01 0 200 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 600 10 20 30 40 50 60 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 520 510 500 490 Ta=25℃ VR=20V n=30pcs 90 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs AVE:495.1mV 480 80 70 60 50 40 30 AVE:6.966uA 20 60 50 40 30 AVE:37.9pF 20 0 0 Ct DISPERSION MAP 8.3ms AVE:85.0A 0 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 50 70 10 30 100 80 IR DISPERSION MAP 150 15 10 5 AVE:11.7ns Ifsm 8.3ms 8.3ms 1cyc 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP Mounted on epoxy board t 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IF=0.5A 100 Rth(j-a) Rth(j-l) IM=1mA 100 time(s) td=300us Rth(j-c) 10 1 0.001 FORWARD POWER DISSIPATION:Pf(W) Ifsm 150 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1.5 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 30 Ta=25℃ f=1MHz VR=10V n=10pcs 90 10 VF DISPERSION MAP 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 530 FORWARD VOLTAGE:VF(mV) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 1000 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ta=125℃ f=1MHz Ta=75℃ D=1/2 1 DC Sin(θ＝180) 0.5 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.A 2 2/3 RB160A60 Diodes 0.15 D=1/2 0.1 DC 0.05 Sin(θ＝180) 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 Io 0A 0V 2.5 t 2 T 1.5 DC D=1/2 1 0.5 Sin(θ＝180) 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) t 2 DC 125 T VR D=t/T VR=30V Tj=125℃ 1.5 D=1/2 1 0.5 0 Io 0A 0V 2.5 VR D=t/T VR=30V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 3 3 0.2 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:6.90kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1