ROHM RB161M-20

RB161M-20
Diodes
Schottky barrier diode
RB161M-20
zApplications
General rectification
zLand size figure
zExternal dimensions (Unit : mm)
0.15±0.03
1.6±0.1
0.85
3.5±0.2
0~0.1
3.05
①
zFeatures
1) Power mold type. (CPD3)
2) Low VF
3) High reliability
2.6±0.1
1.2
0.9±0.1
0.6
0.8±0.1
0.8±0.1
PMDU
zStructure
0.45
ROHM : PMDU
JEDEC : SOD-123
① Manufacture
製造年月Date
0.6
0~0.1
0.15±0.03
zConstruction
Silicon epitaxial planer
zTaping dimensions (Unit : mm)
1.81±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
4.0±0.1
φ1.0±0.2
0
Limits
8.0±0.2
3.71±0.05
0.25±0.05
2.8±0.05
φ1.55±0.1
0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
1.05±0.1
Unit
V
V
A
A
℃
℃
25
20
1
30
125
-40 to +125
(*1)Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
Min.
-
Typ.
0.28
0.31
Max.
0.32
0.35
Unit
V
V
IR
-
280
700
µA
Conditions
IF=0.5A
IF=1.0A
VR=20V
1/3
RB161M-20
Diodes
zElectrical characteristic curves
1
1000
1000000
Ta=25℃
0.1
Ta=-25℃
0.01
100000
Ta=75℃
10000
1000
Ta=25℃
100
Ta=-25℃
10
200
400
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
REVERSE CURRENT:IR(uA)
340
330
AVE:311.1mV
320
310
700
600
500
400
300
200
AVE:283.1uA
100
370
360
350
340
330
320
AVE:351.2pF
300
IR DISPERSION MAP
150
Ct DISPERSION MAP
100
8.3ms
50
AVE:65.0A
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
AVE:11.7ns
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
RESERVE RECOVERY TIME:trr(ns)
30
100
380
310
0
VF DISPERSION MAP
0
0
Ifsm
8.3ms 8.3ms
1cyc
50
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
t
100
50
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
100
Mounted on epoxy board
0.8
Rth(j-a)
100
Rth(j-c)
10
IM=100mA
1ms
1
0.001
IF=1A
0.6
D=1/2
DC
0.4
Sin(θ=180)
0.2
time
300us
0.1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
1000
150
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
390
Ta=25℃
VR=20V
n=30pcs
800
300
5
10
15
20
25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
900
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=1A
n=30pcs
10
20
1000
350
100
1
1
0
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0.001
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
Ta=125℃
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=75℃
0
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2/3
RB161M-20
Diodes
3
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
4
3
2
D=1/2
DC
1
Sin(θ=180)
0
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
3
0A
0V
2.5
2
DC
1.5
Io
t
T
VR
D=t/T
VR=10V
Tj=125℃
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
5
D=1/2
1
0.5
0A
0V
2.5
2
DC
1.5
Io
VR
t
T
D=t/T
VR=10V
Tj=125℃
D=1/2
1
0.5
Sin(θ=180)
Sin(θ=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve (Io-Ta)
125
0
25
50
75
100
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
125
30
No break at 30kV
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
25
20
15
10
5
AVE:6.90kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1