PN2222A Silicon NPN Transistor Audio Amplifier, Switch TO−92

PN2222A
Silicon NPN Transistor
Audio Amplifier, Switch
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction to Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction to Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are based on a maximum junction temperature of +150C.
Note 2. PCB size: FR−4 76mm x 114mm x 1.57mm (3 inch x 4.5 inch x .062 inch) with minimum land
pattern size.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
40
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
75
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
6
−
−
V
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ICEX
VCE = 60V, VEB(off) = 3V
−
−
10
nA
ICBO
VCE = 60V, IE = 0
−
−
0.01
A
VCE = 60V, IE = 0, TA = +25C
−
−
10
A
VEB = 3V, IC = 0
−
−
10
nA
VCE = 60V, VEB(off) = 3V
−
−
20
nA
IBEV
IBL
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 1V, IC = 0.1mA
20
−
−
VCE = 10V, IC = 0.1mA
35
−
−
VCE = 10V, IC = 1mA
50
−
−
VCE = 10V, IC = 10mA
75
−
−
VCE = 10V, IC = 10mA, TA = −55C
35
−
−
VCE = 10V, IC = 150mA, Note 3
100
−
300
VCE = 1V, IC = 150mA, Note 3
50
−
−
VCE = 10V, IC = 500mA, Note 3
40
−
−
IC = 150mA, IB = 15mA, Note 3
−
−
0.3
V
IC = 500mA, IB = 50mA, Note 3
−
−
1.0
V
IC = 150mA, IB = 15mA, Note 3
0.6
−
1.2
V
IC = 500mA, IB = 50mA, NOte 3
−
−
2.0
V
300
−
−
MHz
ON Characteristics
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Small−Signal Characteristics
Current Gain−Bandwidth Product
fT
IC = 20mA, VCE = 20V, f = 100MHz
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
−
−
8
pF
Input Capacitance
Cibo
VEB = 0.5V, IC = 0, f = 1MHz
−
−
25
pF
Collector−Base Time Constant
rb’Cc
IC = 20mA, VCB = 20V, f = 31.8MHz
−
−
150
pS
IC = 100A, VCE = 10V,
RS = 1k, f = 1kHz
−
−
4
dB
IC = 20mA, VCE = 20V, f = 300MHz
−
−
60

VCC = 30V, VEB(off) = 0.5V,
IC = 150mA, IB1 = 15mA
−
−
10
ns
−
−
25
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
−
−
225
ns
−
−
60
ns
Noise Figure
Real Part of Common−Emitter
High Frequency Input Impedance
NF
Re(hie)
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max