PN2907A Silicon PNP Transistor Audio Amplifier, Switch TO−92

PN2907A
Silicon PNP Transistor
Audio Amplifier, Switch
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TA = 25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These are steady−state limits and based on a maximum junction temperature of +150C.
Note 2. PCB size: FR−4 76mm x 114mm x 1.57mm (3 inch x 4.5 inch x .062 inch) with minimum land
pattern size.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
60
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
60
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
5
−
−
V
Base Cutoff Current
Collector Cutoff Current
IBL
VCE = 30V, VEB = 0.5V
−
−
50
nA
ICEX
VCE = 30V, VEB = 0.5V
−
−
50
nA
ICBO
VCB = 50V, IE = 0
−
−
0.02
A
VCB = 50V, IE = 0, TA = +150C
−
−
20
A
VCE = 10V, IC = 0.1A
75
−
−
VCE = 10V, IC = 1mA
100
−
−
VCE = 10V, IC = 10mA
100
−
−
VCE = 10V, IC = 150mA, Note 3
100
−
300
VCE = 10V, IC = 500mA, Note 3
50
−
−
IC = 150mA, IB = 15mA, Note 3
−
−
0.4
V
IC = 500mA, IB = 50mA, Note 3
−
−
1.5
V
IC = 150mA, IB = 15mA, Note 4
−
−
1.3
V
IC = 500mA, IB = 50mA
−
−
2.6
V
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
fT
IC = 50mA, VCE = 20V, f = 100MHz
200
−
−
MHz
Small Signal Characteristics
Current Gain − Bandwidth Product
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 100kHz
−
−
8
pF
Input Capacitance
Cib
VBE = 2V, IC = 0, f = 1MHz
−
−
30
pF
Turn−On Time
ton
VCC = 30V, IC = 150mA, IB1 = 15mA
−
−
45
ns
Delay Time
td
−
−
10
ns
Rise Time
tr
−
−
40
ns
−
−
100
ns
−
−
80
ns
−
−
30
ns
Switching Characteristics
Turn−Off Time
toff
Storage Time
ts
Fall Time
tf
VCC = 6V, IC = 150mA,
IB1 = IB2 = 15mA
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max