PN2907A Silicon PNP Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = 25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These are steady−state limits and based on a maximum junction temperature of +150C. Note 2. PCB size: FR−4 76mm x 114mm x 1.57mm (3 inch x 4.5 inch x .062 inch) with minimum land pattern size. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 60 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 60 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 − − V Base Cutoff Current Collector Cutoff Current IBL VCE = 30V, VEB = 0.5V − − 50 nA ICEX VCE = 30V, VEB = 0.5V − − 50 nA ICBO VCB = 50V, IE = 0 − − 0.02 A VCB = 50V, IE = 0, TA = +150C − − 20 A VCE = 10V, IC = 0.1A 75 − − VCE = 10V, IC = 1mA 100 − − VCE = 10V, IC = 10mA 100 − − VCE = 10V, IC = 150mA, Note 3 100 − 300 VCE = 10V, IC = 500mA, Note 3 50 − − IC = 150mA, IB = 15mA, Note 3 − − 0.4 V IC = 500mA, IB = 50mA, Note 3 − − 1.5 V IC = 150mA, IB = 15mA, Note 4 − − 1.3 V IC = 500mA, IB = 50mA − − 2.6 V ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit fT IC = 50mA, VCE = 20V, f = 100MHz 200 − − MHz Small Signal Characteristics Current Gain − Bandwidth Product Output Capacitance Cob VCB = 10V, IE = 0, f = 100kHz − − 8 pF Input Capacitance Cib VBE = 2V, IC = 0, f = 1MHz − − 30 pF Turn−On Time ton VCC = 30V, IC = 150mA, IB1 = 15mA − − 45 ns Delay Time td − − 10 ns Rise Time tr − − 40 ns − − 100 ns − − 80 ns − − 30 ns Switching Characteristics Turn−Off Time toff Storage Time ts Fall Time tf VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max