2N2905A Silicon PNP Transistor Small−Signal Switching TO−39

2N2905A
Silicon PNP Transistor
Small−Signal Switching
TO−39 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation, PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W
Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA
Collector−Emitter Cutoff Current
ICES
VCE = 60V
−
−
1.0
A
Collector−Base Cutoff Current
ICBO
VCB = 50V
−
−
10
nA
VCB = 60V
−
−
10
A
VEB = 5V
−
−
10
A
VEB = 3.5V
−
−
50
nA
IC = 0.1mA, VCE = 10V
75
−
−
IC = 1.0mA, VCE = 10V
100
−
450
IC = 10mA, VCE = 10V
100
−
−
IC = 150mA, VCE = 10V
100
−
300
IC = 500mA, VCE = 10V
50
−
−
IC = 150mA, IB = 15mA
−
−
0.4
V
IC = 500mA, IB = 50mA
−
−
1.6
V
IC = 150mA, IB = 15mA
−
−
1.3
V
IC = 500mA, IB = 50mA
−
−
2.6
V
Emitter−Base Cutoff Current
IEBO
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Magnitude of Small Signal Current Gain
|hfe|
IC = 50mA, VCE = 20V, f = 100MHz
2.0
−
−
Small−Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
100
−
−
Output Capacitance
Cobo
VCB = 10V, IE = 0, 100kHz  f  1MHz
−
−
8.0
pF
Input Capacitance
Cibo
VEB = 2V, IC = 0, 100kHz  f  1MHz
−
−
30
pF
Small−Signal Characteristics
Switching Characteristics
Turn−On Time
ton
−
−
45
ns
Turn=Off Time
toff
−
−
300
ns
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45
.031 (.793)