NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W Note 1 RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 2 180 – – V Collctor–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 180 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V VCB = 120V, IE = 0 – – 50 nA VCB = 120V, IE = 0, TA = +100°C – – 50 nA VEB = 4V, IC = 0 – – 50 nA Collector Cutoff Current Emitter Cutoff Current ICBO IEBO Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 5V, IC = 1mA 80 – – VCE = 5V, IC = 10mA 80 – 250 VCE = 5V, IC = 50mA 30 – – IC = 10mA, IB = 1mA – – 0.15 V IC = 50mA, IB = 5mA – – 0.20 V IC = 10mA, IB = 1mA – – 1.0 V IC = 50mA, IB = 5mA – – 1.0 V 100 – 300 MHz ON Characteristics (Note 2) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT VCE = 10V, IC = 10mA, f = 100MHz Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz – – 6 pF Input Capacitance Cibo VBE = 0.5V, IC = 0, f = 1MHz – – 20 pF Small–Signal Current Gain hfe VCE = 10V, IC = 1mA, f = 1kHz 50 – 200 Noise Figure NF VCE = 5V, IC = 250µA, RS = 1kΩ, f = 10Hz to 15.7kHz – – 8.0 Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max dB