2N3417 NPN Silicon Transistor General Purpose Amplifier TO−92 Type Package Description: The 2N3417 is a silicon NPN transistor in a TO−92 type package designed for use as a general purpose amplifier and switch requiring collector currents to 300mA. Absolute Maximum Ratings: (TA = +255C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derat Above +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.35C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2005C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 2. These ratings are based on a maximum junction temperature of +150 degrees C. Note 3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle. operations. Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 4 50 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 103A, IE = 0 50 − − V Emitter−Base Breakdown Voltage V(BR)CEO IE = 103A, IC = 0 5 − − V VCB = 25V, IE = 0 − − 100 nA VCB = 18V, IE = 0, TA = +1005C − − 15 3A VEB = 5V, IC = 0 − − 100 nA Collector Cutoff Current Emitter Cutoff Current ICBO IEBO Note 4. Pulse test: Pulse Width 3 3003s, Duty Cycle 3 2%. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 4) DC Current Gain hFE VCE = 4.5V, IC = 2mA 180 − 540 Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 3mA − − 0.3 V Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 3mA 0.6 − 1.3 V IC = 2mA, VCE = 4.V, f = 1kHz 180 − − Small−Signal Characteristics Small−Signal Current Gain hfe Note 4. Pulse test: Pulse Width 3 3003s, Duty Cycle 3 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max