NTE2396A MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Type Package D Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. Starting TJ = +25C, L = 1.5mH, RG = 25W, IAS = 16A Note 3. ISD 16A, di/dt 340A/ms, VDD V(BR)DSS, TJ +175C Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient DV(BR)DSS Reference to +25C, ID = 1mA DT VGS = 0V, ID = 250mA Min Typ Max Unit 100 − − V − 0.12 − V/C − − 0.044 W Static Drain−to−Source On−Resistance J RDS(on) VGS = 10V, ID = 16A, Note 4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.0 − 4.0 V VDS = 50V, ID = 16A, Note 4 5.8 − − mhos VDS = 100V, VGS = 0V − − 25 mA VDS = 80V, VGS = 0V, TJ = +150C − − 250 mA Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = 20V − − 100 nA Gate−to−Source Reverse Leakage IGSS VGS = −20V − − −100 nA ID = 16A, VDS = 80V, VGS = 10V − − 71 nC Total Gate Charge Qg Gate−to−Source Charge Qgs − − 14 nC Gate−to−Drain (“Miller”) Charge Qgd − − 21 nC Turn−On Delay Time td(on) − 11 − ns − 35 − ns td(off) − 39 − ns tf − 35 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 1960 − pF Rise Time tr Turn−Off Delay Time Fall Time VDD = 50V, ID = 16A, RG = 5.1W, VGS = 10V Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 250 − pF Reverse Transfer Capacitance Crss − 40 − pF Single Pulse Avalanche Energy (Note 2) EAS 700 185 mJ (Note 5) (Note 6) Note Note Note Note 2. 4. 5. 6. IAS = 16A, L = 1.5mH − Starting TJ = +25C, L = 1.5mH, RG = 25W, IAS = 16A Pulse width 400 s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = +175C. Source−Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Min Typ Max Unit − − 33 A Pulsed Source Current (Body Diode) ISM Note 1 − − 110 A Diode Forward Voltage VSD TJ = +25C, IS = 16A, VGS = 0V, Note 4 − − 1.2 V Reverse Recovery Time trr − 115 170 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 16A, di/dt = 100A/ms, Note 4 − 505 760 nC Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 400 s; duty cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab