2372

NTE2372
MOSFET
P−Ch, Enhancement Mode
High Speed Switch
TO220 Type Package
Features:
D Dynamic dv/dt Rating
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
D TO220 Case Style
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Inductive Current, Clamp, ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. ISD 3.5A, di/dt 95A/s, VDD V(BR)DSS, TJ +150C
Note 3. Pules Width 300s, Duty Cycle 2%.
Rev. 10−13
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
VGS = 0V, ID = 250A
Min
Typ
Max
Unit
200
−
−
V
−
0.22
−
V/C
−
−
1.5
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 1.5A, Note 3
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
2.0
−
4.0
V
VDS = 50V, ID = 1.5A, Note3
1.0
−
−
mhos
VDS = 200V, VGS = 0V
−
−
100
A
VDS = 160V, VGS = 0V, TJ = +125C
−
−
500
A
Forward Transconductance
Drain−to−Source Leakage Current
gfs
IDSS
Gate−to−Source Forward Leakage
IGSS
VGS = −20V
−
−
−100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = 20V
−
−
100
nA
ID = 4A, VDS = 160V, VGS = 10V,
Note 3
−
−
22
nC
−
−
12
nC
−
−
10
nC
−
15
−
ns
−
25
−
ns
td(off)
−
20
−
ns
tf
−
15
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
350
−
pF
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 100V, ID = 1.5A, RG = 50 ,
RD = 67 , Note 3
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
100
−
pF
Reverse Transfer Capaticance
Crss
−
30
−
pF
Min
Typ
Max
Unit
−
−
3.5
A
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
14
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 3.5A, VGS = 0V,
Note 3
−
−
7.0
V
Reverse Recovery Time
trr
−
300
450
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 3.5A,
di/dt = 100A/s, Note 3
−
1.9
2.9
C
Forward Turn−On Time
ton
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. Pulse width 300s; duty cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab