NTE2372 MOSFET P−Ch, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style D G S Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Inductive Current, Clamp, ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. ISD 3.5A, di/dt 95A/s, VDD V(BR)DSS, TJ +150C Note 3. Pules Width 300s, Duty Cycle 2%. Rev. 10−13 Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Drain−to−Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient V(BR)DSS Reference to +25C, ID = 1mA TJ VGS = 0V, ID = 250A Min Typ Max Unit 200 − − V − 0.22 − V/C − − 1.5 Static Drain−to−Source On−Resistance RDS(on) VGS = 10V, ID = 1.5A, Note 3 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 − 4.0 V VDS = 50V, ID = 1.5A, Note3 1.0 − − mhos VDS = 200V, VGS = 0V − − 100 A VDS = 160V, VGS = 0V, TJ = +125C − − 500 A Forward Transconductance Drain−to−Source Leakage Current gfs IDSS Gate−to−Source Forward Leakage IGSS VGS = −20V − − −100 nA Gate−to−Source Reverse Leakage IGSS VGS = 20V − − 100 nA ID = 4A, VDS = 160V, VGS = 10V, Note 3 − − 22 nC − − 12 nC − − 10 nC − 15 − ns − 25 − ns td(off) − 20 − ns tf − 15 − ns Between lead, .250in. (6.0) mm from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 350 − pF Total Gate Charge Qg Gate−to−Source Charge Qgs Gate−to−Drain (“Miller”) Charge Qgd Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time Fall Time VDD = 100V, ID = 1.5A, RG = 50 , RD = 67 , Note 3 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss − 100 − pF Reverse Transfer Capaticance Crss − 30 − pF Min Typ Max Unit − − 3.5 A Source−Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulsed Source Current (Body Diode) ISM Note 1 − − 14 A Diode Forward Voltage VSD TJ = +25C, IS = 3.5A, VGS = 0V, Note 3 − − 7.0 V Reverse Recovery Time trr − 300 450 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 3.5A, di/dt = 100A/s, Note 3 − 1.9 2.9 C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 3. Pulse width 300s; duty cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab