NTE2372 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements D TO220 Case Style Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 Inductive Current, Clamp, ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 2. ISD ≤ 3.5A, di/dt ≤ 95A/µs, VDD ≤ V(BR)DSS, TJ ≤ +150°C Note 3. Pules Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Drain–to–Source Breakdown Voltage V(BR)DSS Breakdown Voltage Temp. Coefficient ∆V(BR)DSS Reference to +25°C, ID = 1mA ∆TJ VGS = 0V, ID = 250µA Min Typ Max Unit 200 – – V – 0.22 – V/°C – – 1.5 Ω Static Drain–to–Source On–Resistance RDS(on) VGS = 10V, ID = 1.5A, Note 3 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V VDS = 50V, ID = 1.5A, Note3 1.0 – – mhos VDS = 200V, VGS = 0V – – 100 µA VDS = 160V, VGS = 0V, TJ = +125°C – – 500 µA Forward Transconductance Drain–to–Source Leakage Current gfs IDSS Gate–to–Source Forward Leakage IGSS VGS = –20V – – –100 nA Gate–to–Source Reverse Leakage IGSS VGS = 20V – – 100 nA ID = 4A, VDS = 160V, VGS = 10V, Note 3 – – 22 nC – – 12 nC – – 10 nC – 15 – ns – 25 – ns td(off) – 20 – ns tf – 15 – ns Between lead, .250in. (6.0) mm from package and center of die contact – 4.5 – nH – 7.5 – nH VGS = 0V, VDS = 25V, f = 1MHz – 350 – pF Total Gate Charge Qg Gate–to–Source Charge Qgs Gate–to–Drain (“Miller”) Charge Qgd Turn–On Delay Time td(on) Rise Time tr Turn–Off Delay Time Fall Time VDD = 100V, ID = 1.5A, RG = 50Ω, RD = 67Ω, Ω Note 3 Internal Drain Inductance LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss – 100 – pF Reverse Transfer Capaticance Crss – 30 – pF Min Typ Max Unit – – 3.5 A Source–Drain Ratings and Characteristics: Parameter Symbol Continuous Source Current (Body Diode) IS Test Conditions Pulsed Source Current (Body Diode) ISM Note 1 – – 14 A Diode Forward Voltage VSD TJ = +25°C, IS = 3.5A, VGS = 0V, Note 3 – – 7.0 V Reverse Recovery Time trr – 300 450 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 3.5A, di/dt = 100A/µs, Note 3 – 1.9 2.9 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD) Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 3. Pulse width ≤ 300µs; duty cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab