1.2V Drive Pch MOSFET RZM002P02 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET 1.2 0.32 zFeatures 1) High Speed Switching. 2) Small package (VMT3). 3) Ultra Low Voltage drive. (1.2V drive) 0.2 VMT3 0.8 1.2 (3) (1)(2) 0.4 0.4 0.2 0.22 0.13 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol : YK zInner circuit zApplications Switching (3) zPackaging specifications Package Type Taping Code T2L Basic ordering unit (pieces) 8000 ∗2 (1) ∗1 RZM002P02 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150 Unit V V mA mA mA mA mW °C °C Symbol Limits Unit 833 °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Rth(ch-a) ∗ ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.B Data Sheet RZM002P02 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state − RDS (on)∗ resistance − − Yfs ∗ 0.2 Forward transfer admittance − Ciss Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance − td (on) ∗ Turn-on delay time Rise time tr ∗ − td (off) ∗ Turn-off delay time − Fall time − tf ∗ Qg ∗ − Total gate charge Gate-source charge Qgs ∗ − Gate-drain charge Qgd ∗ − Typ. Max. − − − − 0.8 1.0 1.3 1.6 2.4 − 115 10 6 6 4 17 17 1.4 0.3 0.3 ±10 − −1 −1.0 1.2 1.5 2.2 3.5 9.6 − − − − − − − − − − − Unit µA V µA V Ω Ω Ω Ω Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −100uA ID= −200mA, VGS= −4.5V ID= −100mA, VGS= −2.5V ID= −100mA, VGS= −1.8V ID= −40mA, VGS= −1.5V ID= −10mA, VGS= −1.2V VDS= −10V, ID= −200mA VDS= −10V VGS= 0V f=1MHz VDD −10V ID= −100mA VGS= −4.5V RL 100Ω RG= 10Ω VDD −10V, ID= −200mA VGS= −4.5V RL 50Ω, RG= 10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. VSD ∗ − − −1.2 Unit V Conditions IS= −200mA, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.B Data Sheet RZM002P02 zElectrical characteristic curves VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 VGS= -1.5V 0.05 VGS= -1.2V VGS= -2.5V VGS= -1.8V VGS= -1.5V 0.15 VGS= -1.2V 0.1 0.05 VGS= -1.0V VGS= -1.0V 0 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 1 0.01 1000 100 0.001 1 0.01 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 Resistance vs. Drain Current(Ⅲ) 10000 VGS= -1.2V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 3/4 1 Fig.6 Static Drain-Source On-State VGS= -1.5V Pulsed 100 0.001 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] 1000 1 1.5 1000 Resistance vs. Drain Current(Ⅱ) 10000 0.1 VGS= -2.5V Pulsed Fig.5 Static Drain-Source On-State STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 0.1 1 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.5 GATE-SOURCE VOLTAGE : -VGS[V] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 Resistance vs. Drain Current(Ⅰ) 100 0.001 0 10 1000 Fig.4 Static Drain-Source On-State VGS= -1.8V Pulsed 8 10000 VGS= -4.5V Pulsed DRAIN-CURRENT : -ID [A] 10000 6 Fig.2 Typical output characteristics(Ⅱ) Ta=25°C Pulsed 0.01 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) 100 0.001 Ta= 75°C Ta= 25°C Ta= - 25°C 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.4 Ta= 125°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 0.2 0.1 0.0001 0 0 10000 1 V = -10V DS Pulsed Ta=25°C Pulsed VGS= -4.5V DRAIN CURRENT : -ID [A] VGS= -10.0V VGS= -4.5V VGS= -3.2V 0.15 0.2 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 0.2 0.1 100 0.001 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2009.06 - Rev.B Data Sheet Ta=-25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.01 0.1 0.5 tf 100 1 td(on) 1 1 0 2 0.1 1 3 2 Ta=25°C VDD = -10V ID = -0.2A R G=10Ω Pulsed 0 0.5 1 Ta=25°C f=1MHz VGS=0V 8 10 Ciss 100 10 Coss Crss 1 0.01 1.5 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] DRAIN-CURRENT : -ID [A] Fig.13 Switching Characteristics 6 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 4 1 4 GATE-SOURCE VOLTAGE : -VGS[V] 1000 0 0.01 ID = -0.01A 2 1.5 5 Ta=25°C VDD = -10V VGS=-4.5V R G=10Ω Pulsed 10 tr ID = -0.2A 3 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS [V] td(off) 4 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID [A] 1000 Ta=25°C Pulsed 0 0 1 Fig.10 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] 5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 1 VDS= -10V Pulsed CAPACITANCE : C [pF] 1.0 REVERSE DRAIN CURRENT : -Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] RZM002P02 Fig.15 Typical Capacitance vs. Drain-Source Voltage Fig.14 Dynamic Input Characteristics zMeasurement circuit Pulse width ID VDS VGS VGS 10% 50% 50% 90% RL D.U.T. 10% VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG (Const.) D.U.T. RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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