ROHM RSH070P05

4V Drive Pch MOSFET
RSH070P05
Dimensions (Unit : mm)
Structure
Silicon P-channel MOSFET
SOP8
Features
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
(8)
Taping
(7)
(6)
(5)
TB
Code
Basic ordering unit (pieces)
2500
RSH070P05
∗2
∗1
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Chanel temperature
Range of Storage temperature
Symbol
Limits
VDSS
-45
VGSS
±20
ID
±7.0
IDP *1
±28
IS
-1.6
ISP *1
-28
PD *2
2
Tch
150
Tstg
-55 to +150
Unit
V
V
A
A
A
A
W
o
o
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
C
C
*1 PW10ｓ、Duty cycle1
*2 Mounted on a ceramic board
Thermal resistance
Parameter
Chanel to ambient
Symbol
Rth(ch-a) *
Limits
62.5
Unit
o
C/W
* Mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.12 - Rev.A
RSH070P05
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
−
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −45
Zero gate voltage drain current
−
IDSS
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
−
RDS (on)∗
resistance
−
Yfs ∗ 10.0
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Qg ∗
Total gate charge
−
Qgs ∗
Gate-source charge
−
Qgd ∗
Gate-drain charge
−
−
−
−
19
25
28
−
4100
510
330
31
35
135
50
34.0
9.5
12
±10
−
−1
−2.5
27
35
39
−
−
−
−
−
−
−
−
47.6
−
−
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −45V, VGS=0V
VDS= −10V, ID= −1mA
ID= −7A, VGS= −10V
ID= −7A, VGS= −4.5V
ID= −7A, VGS= −4.0V
VDS= −10V, ID= −7A
VDS= −10V
VGS=0V
f=1MHz
VDD −25V
ID= −3.5A
VGS= −10V
RL=−7Ω
RG=10Ω
VDD −25V VGS= −5V
ID= −7A
RL=3.5Ω
RG=10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
−1.2
Unit
V
Conditions
IS= −7A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.12 - Rev.A
RSH070P05
Data Sheet
Electrical characteristic curves
10
1.5
2.0
2.5
3.0
1
0.01
3.5
0.1
1
VGS= -4.5V
pulsed
100
10
1
10
0.01
1
0.01
Source Current : -Is [A]
Static Drain-Source On-State
Resistance RDS(on) [m]
1
VGS=0V
pulsed
150
100
ID= -7.0A
50
10
0
5
Drain Current : -ID [A]
0.1
10
15
0.01
0.0
10000
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Crss
Ta=25oC
f=1MHz
VGS=0V
1000
100
10
Ta=25oC
VDD= -25V
VGS= -10V
tf
Ta=25oC
VDD= -25V
ID= -7.0A
9
RG=10
Pulsed
td(off)
td(on)
tr
10
1.5
Fig.6 Source-Current vs.
Source-Drain Voltage
Gate-Source Voltage : -VGS [V]
Coss
Switching Time : t [ns]
Ciss
1000
1.0
Source-Drain Voltage : -VSD [V]
10000
8
7
RG=10
Pulsed
6
5
4
3
2
1
10
0.1
0.5
Gate-Source Voltage : -VGS [V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
100
Ta=125oC
75oC
25oC
-25oC
1
ID= -3.5A
0
0.1
10
10
Ta=25oC
pulsed
10
1
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
200
Ta=125oC
75oC
25oC
-25oC
100
0.1
Drain Current : -ID [A]
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
1000
VGS= -4V
pulsed
Ta=125oC
75oC
25oC
-25oC
Drain Current : -ID [A]
Fig.1 Typical Transfer Characteristics
Static Drain-Source On-State
Resistance RDS(on) [m]
Static Drain-Source On-State
Resistance RDS(on) [m]
10
Gate-Source Voltage : -VGS [V]
Capacitance : C [pF]
Ta=125oC
75oC
25oC
-25oC
100
0.1
0.01
1.0
VGS= -10V
pulsed
Static Drain-Source On-State
Resistance RDS(on) [m]
Drain Currnt : -ID [A]
Ta=125oC
75oC
25oC
-25oC
1
1000
1000
VDS= -10V
pulsed
1
10
100
Drain-Source Voltage : -VDS [V]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
0
1
0.01
0.1
1
10
Drain Current : -ID [A]
Fig.8 Switching Characteristics
3/4
0
10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
Fig.9 Dynamic Input Characteristics
2009.12 - Rev.A
RSH070P05
Data Sheet
Measurement circuits
VGS
ID
VDS
VGS
10%
90%
RL
D.U.T.
90%
90%
RG
VDD
VDS
10%
td(on)
tr
ton
Fig.10 Switching Time Test Circuit
10%
td(off)
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.13 Gate Charge Waveform
4/4
2009.12 - Rev.A
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