ROHM RJU003N03T106

2.5V Drive Nch MOSFET
RJU003N03
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
UMT3
2.0
0.9
zFeatures
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
0.7
0.2
0.3
2.1
1.25
(3)
1.3
(1) Source
zApplications
Switching
Each lead has same dimensions
(2) Gate
Abbreviated symbol : LP
(3) Drain
zPackaging specifications and hFE
Package
Type
0.15
0.1Min.
(1)
(2)
0.65 0.65
zInner circuit
Taping
Code
T106
Basic ordering unit (pieces)
3000
(3)
RJU003N03
∗2
(2)
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg
Limits
30
±12
±300
±1.2
200
150
−55 to +150
Unit
V
V
mA
A
mW
°C
°C
Symbol
Rth(ch-a) ∗
Limits
625
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
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○
1/4
2009.03 - Rev.A
Data Sheet
RJU003N03
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Parameter
−
30
−
0.8
−
−
−
0.4
−
−
−
−
−
−
−
−
−
−
−
0.8
0.9
1.4
−
24
11
5
6
4
9
32
±10
−
1
1.5
1.1
1.3
1.9
−
−
−
−
−
−
−
−
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
RDS (on)∗
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
∗
∗
∗
∗
∗
Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Conditions
VGS=±12V, VDS=0V
ID= 1mA, VGS=0V
VDS= 30V, VGS=0V
VDS= 10V, ID= 1mA
ID= 300mA, VGS= 4.5V
ID= 300mA, VGS= 4V
ID= 300mA, VGS= 2.5V
VDS= 10V, ID= 300mA
VDS= 10V
VGS=0V
f=1MHz
VDD 15V
ID= 150mA
VGS= 4V
RL=100Ω
RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
VSD
−
−
1.2
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○
Unit
V
Conditions
IS= 200mA, VGS=0V
2/4
2009.03 - Rev.A
Data Sheet
RJU003N03
zElectrical characteristics curves
Ta=25°C
Pulsed
0.2
VGS= 1.8V
0.15
VGS= 1.6V
0.1
VGS= 1.4V
0.05
VGS= 1.2V
0.15
VGS= 1.6V
0.1
VGS= 1.2V
0.05
0
0
0
0.4
0.6
0.8
0.01
2
4
6
8
10
0
1
2
3
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25°C
Pulsed
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
1
0.1
0.01
0.1
1
10
VGS= 4.5V
Pulsed
0.1
0.01
0.1
DRAIN-CURRENT : ID[mA]
1
REVERSE DRAIN CURRENT : Is [A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
VGS=0V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
VGS= 4.0V
Pulsed
DRAIN-CURRENT : ID[A]
1
0.1
0.01
10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
VGS= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
0
1
VDS= 10V
Pulsed
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
10
0.2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[Ω]
0.2
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[Ω]
DRAIN CURRENT : ID[A]
0.25
1
Ta=25°C
Pulsed
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.0V
0.25
DRAIN CURRENT : ID[A]
VGS= 10V
VGS= 4.5V
VGS= 4.0V
DRAIN CURRENT : ID[A]
0.3
0.3
10
8
ID= 100mA
6
4
ID= 300mA
Ta=25°C
Pulsed
2
0
0
0.5
1
SOURCE-DRAIN VOLTAGE :
Fig.8 Reverse Drain Current
vs. Sourse-Drain Voltage
3/4
1.5
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.9 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
2009.03 - Rev.A
Data Sheet
RJU003N03
40
tf
1000
Ta=25°C
VDD= 15V
VGS= 4.0V
RG=10Ω
Pulsed
100
tr
td(on)
10
1
0.001
0.01
0.1
100
VDD= 24V
VDD=15V
VDD=10V
30
20
Ta=25°C
ID= 0.3A
RG=10Ω
Pulsed
10
0
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
DRAIN CURRENT : ID (A)
Operation in this area is limited by RDS(ON)
(VGS=4.5V)
100us
1
1ms
PW = 10ms
DC operation
0.01
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.1
1
10
Crss
Ta=25°C
f=1MHz
VGS=0V
0.5
1
1.5
2
0.01
100
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0.1
1
10
100
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
10
1
0.1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 625 °C/W
Mounted on a SERAMIC board
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Maximum Safe Operating Aera
Coss
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.11 Dynamic Input Characteristics
Fig.10 Switching Characteristics
0.001
10
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : ID[A]
0.1
Ciss
1
0
1
CAPACITANCE : C [pF]
td(off)
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
10000
Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width
4/4
2009.03 - Rev.A
Appendix
Notes
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upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
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you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
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Appendix-Rev4.1