4V Drive Nch MOSFET RHP020N06 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) MPT3 1.5 2.5 4.0 zFeatures 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Gate (2)Drain zApplications Switching (3)Source zPackaging specifications and hFE Package Type Abbreviated symbol : LR zInner circuit Taping Code T100 Basic ordering unit (pieces) 1000 DRAIN RHP020N06 ∗2 GATE ∗1 SOURCE ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Total power dissipation Tch Tstg Channel temperature Range of storage temperature Limits 60 ±20 ±2 ±8 2 8 500 2 150 −55 to +150 Unit V V A A A A mW W °C °C Limits 250 62.5 Unit °C/W °C/W ∗2 + + ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 40 40 0.7mm ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ + + ∗ When mounted on a 40 40 0.7mm ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.03 - Rev.A Data Sheet RHP020N06 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Parameter − 60 − 1.0 − − − 2.0 − − − − − − − − − − − − − − 150 200 240 − 140 50 40 7 10 22 18 7 1 2 ±10 − 1 2.5 200 280 340 − − − − − − − − 14 − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 10V ID= 2A, VGS= 4.5V ID= 2A, VGS= 4V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 30V ID= 1A VGS= 10V RL=30Ω RG=10Ω VDD 30V VGS= 10V ID= 2A ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Typ. − Max. 1.2 Unit V Conditions IS= 2A, VGS=0V 2/4 2009.03 - Rev.A Data Sheet RHP020N06 zElectrical characteristics curves VGS= 10V VGS= 5.0V VGS= 4.5V VGS= 3.5V VGS= 4.0V VGS= 2.8V VGS= 2.4V 6 4 2 VDS= 10V Pulsed VGS= 10V Ta=25°C VGS= 5.0V Pulsed 8 DRAIN CURRENT : ID[A] 8 10 10 Ta=25°C Pulsed DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 10 VGS= 4.5V 6 VGS= 4.0V 4 VGS= 3.0V 2 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 VGS= 2.4V 0 0.2 0.4 0.6 0.8 1 0 2 6 8 0 10 1 2 3 4 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V] Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics Ta= 25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V 1 0.1 0.1 1 10 VGS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.01 0.01 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 10 0.01 0.01 DRAIN-CURRENT : ID[A] 1 10 0.01 0.01 0.1 1 0 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 REVERSE DRAIN CURRENT : Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.01 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 VGS= 4.5V Pulsed 0 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 VGS= 4.0V Pulsed 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 4 Fig.1 Typical Output Characteristics(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 0.001 0 0 VDS= 10V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.03 - Rev.A Data Sheet 1000 Ta=25°C Pulsed 0.5 0.4 ID= 2.0A 0.3 0.2 0.1 9 td(off) 10 ID= 1.0A td(on) tr 1 0 5 10 15 0.01 0.1 GATE-SOURCE VOLTAGE : VGS[V] 100 DRAIN CURRENT : ID (A) Ciss Crss Ta=25°C f=1MHz VGS=0V 10 Coss 8 7 6 5 4 Ta=25°C VDD= 30V ID= 2.0A RG=10Ω Pulsed 3 2 1 0 0 1 2 3 4 5 6 TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics 1000 100 1 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage CAPACITANCE : C [pF] tf 100 0 Fig.12 Dynamic Input Characteristics Operation in this area is limited by RDS(ON) (VGS= 10V) 100us 10 1ms 1 PW = 10ms DC operation 0.1 0.01 Ta = 25°C Single Pulse MOUNTED ON SERAMIC BOARD 0.001 10 0.01 0.1 1 10 0.1 100 DRAIN-SOURCE VOLTAGE : VDS[V] 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C VDD= 30V VGS=10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] 0.6 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] RHP020N06 Fig.14 Maximum Safe Operating Aera 10 1 0.1 Ta = 25°C Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 62.5 °C/W <Mounted on a SERAMIC board> 0.01 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.03 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.1