ROHM RUQ050N02

1.5V Drive Nch MOSFET
RUQ050N02
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
TSMT6
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) 1.5V drive
Applications
Switching
Each lead has same dimensions
Abbreviated symbol : XG
Packaging specifications
Package
Type
Inner circuit
Taping
(6)
(5)
(4)
TR
Code
Basic ordering unit (pieces)
3000
∗2
RUQ050N02
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
20
±10
±5.0
±10
1.0
10
1.25
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C/W
∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/4
2010.08 - Rev.A
RUQ050N02
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
20
−
0.3
−
−
−
−
6.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
22
27
32
40
−
900
190
120
15
25
70
100
12
2.5
1.7
±10
−
1
1.0
30
38
45
80
−
−
−
−
−
−
−
−
−
−
−
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±10V, VDS=0V
ID= 1mA, VGS=0V
VDS= 20V, VGS=0V
VDS= 10V, ID= 1mA
ID= 5.0A, VGS= 4.5V
ID= 5.0A, VGS= 2.5V
ID= 2.5A, VGS= 1.8V
ID= 1.0A, VGS= 1.5V
VDS= 10V, ID= 5.0A
VDS= 10V
VGS=0V
f=1MHz
VDD 10V
ID= 2.5A
VGS= 4.5V
RL 4Ω
RG=10Ω
VDD 10V, ID= 5.0A
VGS= 4.5V
RL 2Ω, RG=10Ω
∗Pulsed
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 1.0A, VGS=0V
∗Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
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2/4
2010.08 - Rev.A
RUQ050N02
Data Sheet
Electrical characteristics curves
tf
Ciss
Coss
100
Crss
10
0.01
0.1
1
10
td (off)
td (on)
10
tr
1
0.01
100
0.1
1
3
2
1
0
0
2
4
6
8
10
12
14
16
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
ID=5.0A
ID=2.5A
40
20
0
0
1.6
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
1
5
6
7
10
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=4.5V
Pulsed
10
0.01
4
8
9
10
1
0.1
0.01
0.0
0.5
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
1.5
1.0
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.4 Typical Transfer Characteristics
100
3
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
1000
2
VGS=0V
Pulsed
Ta=25°C
Pulsed
10
Fig.6 Source Current vs.
Source-Drain Voltage
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
60
SOURCE CURRENT : IS (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
10
4
DRAIN-SOURCE VOLTAGE : VDS (V)
10
DRAIN CURRENT : ID (A)
100
Ta=25°C
VDD=10V
ID=5A
5
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
1000
6
1000
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10000
VGS=1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙΙ)
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c 2010 ROHM Co., Ltd. All rights reserved.
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3/4
10
2010.08 - Rev.A
RUQ050N02
Data Sheet
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.01
0.1
1
10
100
Ta=25°C
Pulsed
FORWARD TRANSFER ADMITTANCE
: Yfs (S)
VGS=1.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
100
10
0.01
0.1
DRAIN CURRENT : ID (A)
1
VDS=10V
Pulsed
Ta=−25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
1
0.1
0.01
10
0.1
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain current (Ι )
1
10
DRAIN CURRENT : ID (A)
Fig.11 Static Drain-Source
On-State Resistance vs.
Drain current ( )
Fig.12 Forward Transfer Admittance
vs. Drain current
Measurement circuit
Pulse Width
VGS
ID
VDS
RL
90%
50%
10%
VGS
VDS
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.14 Switching Waveforms
Fig.13 Switching Time Measurement Circuit
VG
VGS
ID
VDS
Qg
RL
VGS
IG(Const.)
D.U.T.
Qgs
RG
Qgd
VDD
Charge
Fig.16 Gate Charge Waveform
Fig.15 Gate Charge Measurement Circuit
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c 2010 ROHM Co., Ltd. All rights reserved.
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2010.08 - Rev.A
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R1010A