2.5V Drive Nch MOSFET RTQ020N05 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). (5) 0.7 (4) 1.6 2.8 (6) 0.85 (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions zApplications Switching Abbreviated symbol : PU zPackaging specifications Package Type zInner circuit Taping (6) (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RTQ020N05 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 45 ±12 ±2 ±8 1 8 1.25 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.10 - Rev.A RTQ020N05 Data Sheet zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter − 45 − 0.5 − − − 1.6 − − − − − − − − − − − − − − 140 150 200 − 150 40 15 8 14 16 10 2.3 0.8 0.5 ±10 − 1 1.5 190 210 280 − − − − − − − − − Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 4.5V ID= 2A, VGS= 4V ID= 2A, VGS= 2.5V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 1A VGS= 4.5V RL 25Ω RG=10Ω VDD 25V ,ID= 2A VGS= 4.5V RL 12.5Ω ,RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. − − 1.2 Unit V Conditions IS= 2A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.10 - Rev.A RTQ020N05 Data Sheet zElectrical characteristics curves 2 VGS= 2.0V 1 VGS= 1.8V 0.5 1.5 VGS= 1.8V 0.5 Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 VGS= 2.0V 1 0 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 4 6 8 0 10 100 VGS= 2.5V VGS= 4.0V VGS= 4.5V 10 1000 VGS= 4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 DRAIN-CURRENT : ID [A] 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 0.01 2.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 VDS= 10V Pulsed 1 2 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= 2.5V Pulsed 1.5 VGS= 4.0V Pulsed DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1 GATE-SOURCE VOLTAGE : VGS[V] 10 1 0.5 Fig.3 Typical Transfer Characteristics REVERSE DRAIN CURRENT : Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.01 Fig.2 Typical Output Characteristics(Ⅱ) Ta= 25°C Pulsed 0.1 Ta= 25°C Ta= - 25°C 0.1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 1000 Ta= 125°C Ta= 75°C 0.001 0 1 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1.5 10 V = 10V DS Pulsed Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 2 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 10 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.10 - Rev.A Data Sheet 1000 300 250 Ta=25°C VDD = 25V VGS=4.5V RG=10Ω Pulsed td(off) Ta=25°C Pulsed ID = 2.0A 200 150 ID = 1.0A 100 tf 100 5 GATE-SOURCE VOLTAGE : VGS [V] 350 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] RTQ020N05 10 50 tr td (on) 4 3 2 0 1 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C VDD = 25V ID = 2.0A RG=10Ω Pulsed 1 0.01 0.1 1 0 10 0.5 1 1.5 2 2.5 DRAIN-CURRENT : ID [A] TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 3 1000 CAPACITANCE : C [pF] Ciss 100 Crss 10 Coss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit VG VGS ID VDS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate charge waveform 4/4 2009.10 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A