RENESAS RJK2508DPK-E

Preliminary Datasheet
RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0508-0300
Rev.3.00
Jun 30, 2010
Features
 Low on-resistance
 Low leakage current
 High speed switching
Outline
PRSS0004ZE-A
(Previous code: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Ratings
250
±30
50
100
50
100
17
18.0
Unit
V
V
A
A
A
A
A
mJ
Pch Note2
ch-c
Tch
Tstg
150
0.833
150
–55 to +150
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
Page 1 of 6
RJK2508DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
250
—
—
3.0
19
—
Typ
—
—
—
—
32
0.056
Max
—
1
±0.1
4.5
—
0.064
Unit
V
A
A
V
S

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2600
370
43
40
210
110
145
60
15
26
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
1.0
180
1.5
—
V
ns
Body-Drain diode reverse recovery
charge
Qrr
—
1.2
—
C
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VDS = 10 V Note4
ID = 25 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 25 A
VGS = 10 V
RL = 5 
Rg = 10 
VDD = 200 V
VGS = 10 V
ID = 50 A
IF = 50 A, VGS = 0 Note4
IF = 50 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
Page 2 of 6
RJK2508DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
300
100
50
0
100
ID (A)
150
50
100
Case Temperature
150
10 10 μ
PW
0μ
s
(1 =
s
sh 1 m
ot)
s
30
10
3
Drain Current
Channel Dissipation
Pch (W)
200
1
0.3
0.1
Operation in
0.03 this area is
0.01 limited by RDS(on)
0.003
Ta = 25°C
0.001
0.1 0.3
1
200
Typical Output Characteristics
Pulse Test
8.5 V
10 V
VDS (V)
6.5 V
40
6V
20
5.5 V
ID (A)
80
60
60
40
20
75°C
VGS = 5 V
4
8
12
Drain to Source Voltage
Pulse Test
6
4
ID = 50 A
2
25 A
10 A
12
4
8
Gate to Source Voltage
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
16
20
VGS (V)
Drain to Source on State Resistance
RDS(on) (Ω)
8
25°C
Tc = −25°C
0
16
20
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
VDS(on) (V)
100 300 1000
VDS = 10 V
Pulse Test
7.5 V
7V
0
30
Typical Transfer Characteristics
80
0
10
100
8V
Drain Current
Drain Current
ID (A)
100
3
Drain to Source Voltage
Tc (°C)
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.00
Pulse Test
0.01
1
3
10
30
100 300
Drain Current ID (A)
1000
Page 3 of 6
Preliminary
0.16
ID = 50 A
0.12
25 A
0.08
10 A
0.04
VGS = 10 V
0
−25
0
25 50 75
Case Temperature
100 125 150
Tc (°C)
25°C
10
75°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
3
10
30
100
ID (A)
VGS = 0
f = 1 MHz
30000
Capacitance C (pF)
200
100
50
20
10
5
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
2
1
Typical Capacitance vs.
Drain to Source Voltage
100000
10000
Ciss
3000
1000
300
Coss
100
Crss
30
10
1
0
3
10
30
100 300 1000
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
12
VDS
8
100
0
VGS
4
VDD = 200 V
100 V
50 V
20
40
Gate Charge
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
60
80
Qg (nC)
0
100
Switching Time t (ns)
VDD = 200 V
100 V
50 V
300
VGS (V)
ID = 50 A
50
100
150
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
16
Gate to Source Voltage
400
VDS (V)
Tc = −25°C
30
Drain Current
500
1
Drain to Source Voltage
100
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.2
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
RJK2508DPK
1000
VGS = 10 V, VDD = 125 V
PW = 5 μs, duty < 1 %
Rg = 10 Ω
tf
tr
tf
td(off)
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
Page 4 of 6
RJK2508DPK
Preliminary
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
40
10 V
5V
20
0
0.4
VGS = 0 V
0.8
1.2
Source to Drain Voltage
1.6
2.0
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
-25 0
25
VSD (V)
50
75
Case Temperature
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
0.0
e
1s
PW
T
PW
ls
pu
ot
1
0.01
10 μ
D=
T
h
100 μ
1m
10 m
100 m
Pulse Width PW (s)
1
Switching Time Test Circuit
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 125 V
Vout
10%
10%
90%
td(on)
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
tr
10%
90%
td(off)
tf
Page 5 of 6
RJK2508DPK
Preliminary
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
RJK2508DPK-E
Note:
Quantity
30 pcs
Shipping Container
Plastic magazine
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G0508-0300 Rev.3.00
Jun 30, 2010
Page 6 of 6
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