Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC Ratings 600 ±30 90 50 180 100 328.9 Unit V V A A A A W j-c j-cd Tj Tstg 0.38 1.1 150 –55 to +150 °C/W °C/W °C °C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Page 1 of 8 RJH60F7BDPQ-A0 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min 4 Typ 1.35 1.6 4700 198 83 63 81 142 74 2.5 25 Max 100 ±1 8 1.75 3.0 Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3 Inductive load IF = 30 A Note3 IF = 30 A diF/dt = 100 A/s Notes: 3. Pulse test R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Page 2 of 8 RJH60F7BDPQ-A0 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 1000 Collector Current IC (A) 10 μs s 10 1 0.1 1 9.2 V 9.8 V 9V 10 V 120 15 V 8.8 V 80 8.6 V 8.4 V 8.2 V VGE = 8 V 40 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 7 Pulse Test Ta = 25°C 6 5 IC = 20 A 50 A 90 A 4 3 2 1 0 6 10 8 2.0 1.8 IC = 90 A 1.6 50 A 1.4 20 A 1.2 1.0 0.8 0.6 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 12 16 14 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 9.6 V Tc = 25°C Single pulse 160 Collector Current IC (A) = 0μ 10 Collector Current IC (A) PW 100 9.4 V Pulse Test Ta = 25°C 160 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 7 IC = 10 mA 6 5 1 mA 4 3 2 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 8 RJH60F7BDPQ-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Forward Current vs. Forward Voltage (Typical) 10000 Cies VGE = 0 V Ta = 25°C Pulse Test 80 Capacitance C (pF) Forward Current IF (A) 100 60 40 20 0 1000 100 Coes 10 0 1 2 3 4 0 5 C-E Diode Forward Voltage VCEF (V) Cres VGE = 0 V f = 1 MHz Ta = 25°C 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) 800 16 IC = 50 A Ta = 25°C VCE 600 VGE 12 VCC = 600 V 300 V 400 8 200 4 VCC = 600 V 300 V 0 0 40 80 120 160 0 200 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Gate Charge Qg (nC) R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Page 4 of 8 RJH60F7BDPQ-A0 Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tf td(off) 100 td(on) tr tr includes the diode recovery 10 1000 Eoff Eon 100 Eon includes the diode recovery 10 10 1 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 25°C 100 1 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 10000 VCC = 400 V, VGE = 15 V IC = 30 A, Ta = 150 °C tr includes the diode recovery Swithing Energy Losses E (μJ) Switching Time t (ns) 10000 1000 td(off) tr tf td(on) 100 10 Eoff Eon 1000 VCC = 400 V, VGE = 15 V IC = 30 A, Ta = 150 °C Eon includes the diode recovery 100 1 10 1 100 1000 10000 Swithing Energy Losses E (μJ) VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω td(off) 100 td(on) tf tr includes the diode recovery 10 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) tr 10 Gate Registance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Times t (ns) 100 10 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon 1000 Eoff Eon includes the diode recovery 100 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 8 RJH60F7BDPQ-A0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 0.0 2 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 10 1 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 1.1°C/W, Tc = 25°C 0.2 0.1 5 0.1 0.0 2 0 . 0 PDM D= 0.01 PW T 1 shot pulse 0.01 10 μ 100 μ 1m 10 m Pulse Width R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 PW T 100 m 1 10 PW (s) Page 6 of 8 RJH60F7BDPQ-A0 Preliminary Switching Time Test Circuit Waveform 90% Diode clamp VGE L 10% 90% 10% 1% 10% IC D.U.T 90% td(on) VCC tr td(off) tf ttail ton Rg toff VCE 10% Diode Reverse Recovery Time Test Circuit Waveform VCC IS D.U.T IS dis/dt L trr 0 Irr Rg R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 0.5 Irr 0.9 Irr Page 7 of 8 RJH60F7BDPQ-A0 Preliminary Package Dimensions JEITA Package Code RENESAS Code PRSS0003ZH-A Previous Code MASS[Typ.] 6.14g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247A 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH60F7BDPQ-A0#T0 R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Quantity 240 pcs Shipping 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