RB085B-90 Diodes Schottky barrier diode RB085B-90 zDimensions (Unit : mm) zApplications General rectification zLand size figure (Unit : mm) 6.0 6.0 2.3±0.2 0.1 0.5±0.1 1.5±0.3 C0.5 1.5 ① 0.75 2.5 zConstruction Silicon epitaxial planar （2） （3） 2.3 2.3 CPD 0.9 （1） 1.6 9.5±0.6 5.5±0.3 0.1 1.6 0.65±0.1 3.0 2.0 6.5±0.2 5.1±0.2 0.1 zFeatures 1) Power mold type. (CPD) 2) Low VF 3) High reliability 0.5±0.1 zStructure 1.0±0.2 2.3±0.2 2.3±0.2 ROHM : CPD JEITA : SC-63 ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 10.1±0.1 10.1±0.1 φ3.0±0.1 8.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Average rectified forward current（*1） Io Forward current surge peak （60Hz・1cyc）（*1） IFSM Junction temperature Tj Storage temperature Tstg 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 Limits 90 90 10 45 150 -40 to +150 Unit V V A A ℃ ℃ Conditions (*1)Rating of per diode : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF Min. - Typ. - Max. 0.83 Unit V IF=5.0A IR - - 150 6.0 µA ℃/W VR=90V junction to case θjc 1/3 RB085B-90 Diodes zElectrical characteristic curves Ta=150℃ 100000 Ta=125℃ 1 Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 10000 Ta=125℃ 1000 Ta=75℃ REVERSE CURRENT:IR(uA) 0.01 0 100 Ta=25℃ 10 Ta=-25℃ 1 10 20 30 40 50 60 70 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 90 0 REVERSE CURRENT:IR(uA) n=30pcs 770 760 750 AVE:715.7mV AVE:766.6mV σ:1.7301mV 140 530 120 100 80 60 AVE:14.3uA 40 150 100 AVE:136.0A RESERVE RECOVERY TIME:trr(ns) 1cyc 8.3ms 50 500 490 480 470 460 450 AVE:498.5pF IR DISPERSION MAP Ifsm 200 510 0 Ct DISPERSION MAP 1000 30 250 520 20 VF DISPERSION MAP 300 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 Ifsm 8.3ms 8.3ms 1cyc 100 AVE:7.40ns 0 0 30 Ta=25℃ f=1MHz VR=0V n=10pcs 540 Ta=25℃ VR=90V n=30pcs 160 740 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 550 180 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 780 10 1 0 200 Ta=25℃ Ta=25℃ IF=10A IF=5A n=30pcs 100 0.1 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 790 FORWARD VOLTAGE:VF(mV) f=1MHz 0.01 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 10 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 100 Ifsm t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=100mA 1ms 15 IF=5A time Rth(j-a) D=1/2 300us 10 Rth(j-c) 1 0.1 0.001 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 DC 10 Sin(θ＝180) 5 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 20 2/3 RB085B-90 Diodes 10 Sin(θ＝180) D=1/2 4 DC 2 0A 0V Io t 20 DC T VR D=t/T VR=45V Tj=150℃ D=1/2 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 6 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 30 30 0A 0V Io t 20 DC T VR D=t/T VR=45V Tj=150℃ D=1/2 10 Sin(θ＝180) Sin(θ＝180) 0 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 10 AVE:5.30kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1