RB095B-60 Diodes Schottky barrier diode RB095B-60 zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 0.9 zConstruction Silicon epitaxial planar （2） （1） 0.65±0.1 （3） 2.3 2.3 CPD 2.5 ① 1.6 3.0 2.0 zFeatures 1) Power mold type. (CPD3) 2) Low VF 3) High reliability 2.3±0.2 0.1 zStructure 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 ROHM : CPD JEITA : SC-63 ① Manufacture Date zTaping dimensions (Unit : mm) 2.0±0.05 φ1.55±0.1 0 8.0±0.1 0.4±0.1 Limits 60 60 6 45 150 -40 to +150 10.1±0.1 10.1±0.1 φ3.0±0.1 8.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Tj Storage temperature Tstg 0～0.5 6.8±0.1 13.5±0.2 TL 16.0±0.2 7.5±0.05 2.5±0.1 4.0±0.1 2.7±0.2 Unit V V A A ℃ ℃ (*1) Rating of per diode : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Conditions Symbol VF Min. - Typ. - Max. 0.58 Unit V IF=3.0A IR - - 300 6.0 µA ℃/W VR=60V junction to case θjc Rev.B 1/3 RB095B-60 Diodes zElectrical characteristic curves 10 f=1MHz 1 Ta=25℃ Ta=75℃ Ta=-25℃ 0.1 10000 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 10 0.01 0 100 200 300 400 500 600 700 800 10 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 20 30 40 50 200 160 120 100 AVE:532.4mV 510 AVE:425.2mV σ:1.6771mV 500 80 60 AVE:20.8uA 40 650 600 550 500 450 350 300 IR DISPERSION MAP Ct DISPERSION MAP 150 AVE:77.0A 100 50 0 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 8.3ms 1cyc 100 15 10 AVE:8.30ns 5 AVE:514.4pF 400 0 30 200 700 20 VF DISPERSION MAP 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 750 140 530 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 Ta=25℃ VR=60V n=30pcs 180 REVERSE CURRENT:IR(uA) Ta=25℃ IF=3A n=30pcs 540 250 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 550 520 1 60 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ Ta=125℃ 1000000 Ta=150℃ 10 1 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP IFSM DISRESION MAP Mounted on epoxy board 250 Ifsm t 200 150 100 50 AVE:77.0A IM=100mA 1ms TIME:t(ms) IFSM-t CHARACTERISTICS time 10 Rth(j-a) 8 300us 10 D=1/2 6 Rth(j-c) DC Sin(θ＝180) 4 1 0.1 0.001 0 IF=5A FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 2 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 5 10 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 15 2/3 RB095B-60 Diodes 15 15 15 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) 10 D=1/2 DC 5 0 DC 10 t T VR D=t/T VR=30V Tj=150℃ D=1/2 5 Sin(θ＝180) 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Io t DC 10 T VR D=t/T VR=30V Tj=150℃ D=1/2 5 Sin(θ＝180) 0 0 0 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 AVE:16.5kV 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1