CPH3455 Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 104mΩ@ 10V ID Max 35V 173mΩ@ 4.5V 3A 208mΩ@ 4V Typical Applications • Load Switch • Motor Drive ELECTRICAL CONNECTION N-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Value Unit Drain to Source Voltage VDSS 35 Gate to Source Voltage VGSS ±20 V V Drain Current (DC) ID 3 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 1 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model Parameter Symbol Value RθJA © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 3 MARKING TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) PACKING TYPE : TL LOT No. Symbol LM Parameter Unit 125 1 °C/W Publication Order Number : CPH3455/D CPH3455 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V 35 VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A typ max Unit V 1 μA ±10 μA 2.6 V 1.7 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V 80 104 mΩ ID=0.75A, VGS=4.5V 123 173 mΩ RDS(on)3 Ciss ID=0.75A, VGS=4V 148 208 mΩ Output Capacitance Coss VDS=20V, f=1MHz 36 pF Reverse Transfer Capacitance Crss 22 pF Turn-ON Delay Time td(on) 4.2 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 186 See specified Test Circuit VDS=20V, VGS=10V, ID=3A pF 4.7 ns 15 ns 5.7 ns 4 nC 0.9 nC 0.7 nC VSD Forward Diode Voltage IS=3A, VGS=0V 0.86 1.2 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V 10V 0V VIN PW=10μs D.C.≤1% ID=1.5A RL=10Ω VIN VOUT D G P.G 50Ω S CPH3455 www.onsemi.com 2 CPH3455 www.onsemi.com 3 CPH3455 www.onsemi.com 4 CPH3455 PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Gate 2 : Source 0.6 2.4 1.4 3 : Drain 0.95 0.95 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) LM CPH3 SC-59, SOT-23, TO-236 (Pb-Free / Halogen Free) 3,000 / Tape & Reel CPH3455-TL-H CPH3455-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH3455 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5