Ordering number : EN7643A MCH6534 Bipolar Transistor http://onsemi.com 15V, 0.7A, Low VCE(sat) NPN Single MCPH6 Applicaitons • Low-frequency power amplifier, high-speed switching motor drivers, muting Features • • • Composite type with 2 NPN transistors contained in a single package, facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Total Power Dissipation Ratings Unit 20 V 15 V VEBO IC 5 ICP PC Collector Dissipation Conditions VCBO VCEO Junction Temperature PT Tj Storage Temperature Tstg 700 V mA 1.4 A When mounted on ceramic substrate (600mm2×0.8mm) 0.5 W When mounted on ceramic substrate (600mm2×0.8mm) 0.55 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-011 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 Packing Type : TL 2 TL 3 0.65 EG LOT No. 0 to 0.02 1 Marking 4 LOT No. 0.25 MCH6534-TL-E 0.15 2.1 1.6 0.25 2.0 0.3 0.07 0.85 Electrical Connection 1 2 3 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 6 5 4 MCPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 6 5 4 1 2 3 80812 TKIM/42004EA TSIM TA-100671 No.7643-1/6 MCH6534 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Ratings Conditions min typ ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=10mA Gain-Bandwidth Product hFE fT VCE=2V, IC=50mA 330 Output Capacitance Cob 3.2 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Unit max 300 100 nA 100 nA 800 IC=200mA, IB=10mA MHz pF 150 300 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 V IC=1mA, RBE=∞ 15 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V 30 ns 77 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 220μF + 470μF VBE= --5V VCC=5V IC=20IB1= --20IB2=500mA Ordering Information Device MCH6534-TL-E Shipping memo MCPH6 3,000pcs./reel Pb Free IC -- VCE mA 200 0.8m 0.9 A VCE=2V 0.7mA 700 120 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 600 500 400 5°C 25°C --25 °C 1.0mA 0.5mA 300 Ta= 7 0.6mA 160 140 IC -- VBE 800 Collector Current, IC -- mA 180 Collector Current, IC -- mA Package 200 100 20 IB=0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 0 2.0 IT05490 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05491 No.7643-2/6 MCH6534 hFE -- IC 1000 VCE=2V DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C Ta=75°C 3 --25°C 2 100 7 5 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 VCE(sat) -- IC 1000 2 °C 75 5°C --2 5°C = Ta 5 2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 7 5 3 2 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V ON-resistance, Ron -- Ω 3 5 7 10 2 3 5 7 100 2 IB 3 2 1.0 7 5 3 5 7 1000 IT05493 IC / IB=20 5 3 2 Ta= --25°C 1000 7 75°C 5 25°C 3 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05495 fT -- IC VCE=2V 5 3 2 100 7 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC -- mA 3 5 7 1000 IT05496 PC -- Ta Mounted on a ceramic board (600mm2✕0.8mm) 0.6 1kΩ 2 3 VBE(sat) -- IC OUT IN 10 7 5 2 0.7 1kΩ 3 2 IT05497 Ron -- IB f=1MHz °C 25 3 5 1.0 3 Collector Dissipation, PC -- W 100 7 5 5 7 f=1MHz 1.0 0.1 = Ta Collector Current, IC -- mA Cob -- VCB 10 °C 75 C 5° --2 7 100 1.0 5 7 1000 IT05494 Collector Current, IC -- mA 100 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 7 2 7 5 100 3 10000 IC / IB=50 7 5 10 1.0 5 7 1000 IT05492 Collector Current, IC -- mA IC / IB=20 7 7 5 VCE(sat) -- IC 1000 0.55 0.5 0.4 To ta 0.3 1u lD nit iss ipa tio n 0.2 0.1 2 0.1 0.1 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06387 No.7643-3/6 MCH6534 Embossed Taping Specification MCH6534-TL-E No.7643-4/6 MCH6534 Outline Drawing MCH6534-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.7643-5/6 MCH6534 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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