ONSEMI CPH5517

Ordering number : EN8205A
CPH5517
Bipolar Transistor
http://onsemi.com
(–)50V, (–)3A, Low VCE(sat) Complementary Dual CPH5
Applications
•
relay drivers, lamp drivers, motor drivers
Features
•
•
•
Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting
The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively
Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm)
Specifications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Ratings
Unit
(--50)60
V
(--)50
V
VEBO
IC
(--)5
V
(--)1.0
A
Collector Dissipation
ICP
IB
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Base Current
Conditions
VCBO
VCEO
(--)3
A
(--)200
Mounted on a ceramic board (600mm2×0.8mm) 1unit
mA
0.9
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7017A-008
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
CPH5517-TL-E
0.15
2.9
3
Packing Type : TL
Marking
LOT No.
EM
0.05
1.6
2.8
0.2
0.6
Package Dimensions
0.9
0.2
0.6
TL
1
0.95
2
0.4
1 : Collector1
2 : Collector2
3 : Emitter2
4 : Base Common
5 : Emitter1
Electrical Connection
5
4
3
CPH5
1
Semiconductor Components Industries, LLC, 2013
September, 2013
2
62012 TKIM/21505 TSIM TB-00001151 No.8205-1/8
CPH5517
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
ICBO
IEBO
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
Emitter Cutoff Current
DC Current Gain
Ratings
min
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Fall Time
μA
(--)0.1
μA
560
MHz
(9)6
(--280)
VCE(sat)
IC=(--)500mA, IB=(--)10mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
See specified Test Circuit.
pF
(--430)
mV
mV
130
190
(--145)
(--220)
mV
90
135
mV
(--)0.81
(--)1.2
(--50)60
IE=(--)10μA, IC=0A
Unit
(--)0.1
420
IC=(--)300mA, IB=(--)6mA
Base-to-Emitter Saturation Voltage
max
200
IC=(--)500mA, IB=(--)10mA
Collector-to-Emitter Saturation Voltage
typ
V
V
(--)50
V
(--)5
V
(36)38
ns
(173)332
ns
(28)40
ns
Switching Time Test Circuit
IB1
PW=20μs
DC≤1%
IB2
OUTPUT
INPUT
VR
RB
24Ω
+
50Ω
100μF
+
470μF
VBE= --5V
VCC=25V
20IB1= --20IB2= IC=500mA
For PNP, the polarity is reversed.
Ordering Information
Device
CPH5517-TL-E
Package
Shipping
memo
CPH5
3,000pcs./reel
Pb Free
No.8987-2/7
CPH5517
IC -- VCE
A
40mA
--1
0mA
Collector Current, IC -- mA
--800
--8mA
--6mA
--600
--4mA
--400
--2mA
--200
IB=0mA
0
0
--0.2
--0.4
--0.6
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--1.0
IB=0mA
0.2
[PNP]
Collector Current, IC -- A
--0.6
--0.5
--0.4
0.6
0.8
1.0
IC -- VBE
1.0
0.8
--0.7
0.4
Collector-to-Emitter Voltage, VCE -- V
IT01643
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
200
--0.8
IT01644
[NPN]
VCE=2V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
5
5
DC Current Gain, hFE
--25°C
100
7
5
2
3
5
7 --1.0
2
IT01647
f T -- IC
[PNP]
[NPN]
VCE=2V
Ta=75°C
--25°C
25°C
2
3
5
7
0.1
2
3
5
7
Gain-Bandwidth Product, f T -- MHz
1000
7
5
3
2
100
7
5
2
3
IT01648
f T -- IC
5
[NPN]
VCE=10V
3
2
1.0
Collector Current, IC -- A
VCE= --10V
3
3
2
--0.01
10
0.01
3
Collector Current, IC -- A
5
hFE -- IC
5
2
2
1.2
IT01646
7
3
7 --0.1
1.0
100
2
5
0.8
3
3
3
0.6
7
Ta=75°C
2
0.4
Base-to-Emitter Voltage, VBE -- V
1000
VCE= --2V
25°C
10
--0.01
0.2
IT01645
3
2
0
--1.2
[PNP]
7
DC Current Gain, hFE
2mA
0
0
Gain-Bandwidth Product, f T -- MHz
4mA
400
0.9
--0.1
6mA
600
--0.9
--0.2
8mA
0
VCE= --2V
--0.3
30mA
800
--1.0
--0.8
[NPN]
10mA
Ta=7
5°C
25°C
--25°C
m
--20
IC -- VCE
1000
20mA
--30
[PNP]
mA
50mA
0
--4
mA
--5
0
Collector Current, IC -- mA
mA
--1000
2
1000
7
5
3
2
100
7
5
3
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
7 --1.0
2
3
IT01649
2
0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
1.0
2
3
IT01650
No.8205-3/8
CPH5517
Cob -- VCB
100
100
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5
3
2
10
7
5
3
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--1.0
2
10
7
5
5 7 0.1
5 7 --100
IT01651
2
--0.1
7
Ta
5
3
°C
=75
C
2 5°
C
--25°
2
--0.01
--0.01
2
3
5
7
2
--0.1
3
5
Collector Current, IC -- A
VCE(sat) -- IC
--1.0
--1.0
IT01653
5°C
--0.1
7
Ta=
7
C
25°
5
C
--25°
3
2
3
5
7
--0.1
2
3
5
Collector Current, IC -- A
VBE(sat) -- IC
--10
--1.0
IT01655
2
Ta= --25°C
7
75°C
25°C
3
2
2
[NPN]
2
0.1
7
5
5°C
7
Ta=
3
2
°C
25
C
--25°
2
3
5
7
2
0.1
3
3
5
7
--0.1
2
3
Collector Current, IC -- A
5
7
--1.0
IT01657
5
VCE(sat) -- IC
7 1.0
IT01654
[NPN]
IC / IB=50
5
3
2
0.1
5°C
7
7
Ta=
5
C
25°
C
--25°
3
2
2
3
5
7
2
0.1
3
5
VBE(sat) -- IC
10
7 1.0
IT01656
[NPN]
IC / IB=50
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
5 7 100
IT01652
IC / IB=20
Collector Current, IC -- A
[PNP]
5
3
3
0.01
0.01
7
IC / IB=50
7
--0.1
--0.01
2
VCE(sat) -- IC
1.0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
5
5 7 10
7
3
--1.0
3
Collector Current, IC -- A
[PNP]
5
2
2
5
0.01
0.01
7
IC / IB=50
--0.01
--0.01
5 7 1.0
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
3
1.0
IC / IB=20
5
2
Collector-to-Base Voltage, VCB -- V
[PNP]
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
5 7 --0.1
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
[NPN]
f=1MHz
7
7
7
Cob -- VCB
[PNP]
f=1MHz
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
0.1
0.01
2
3
5
7
0.1
2
3
Collector Current, IC -- A
5
7 1.0
IT01658
No.8987-4/7
CPH5517
ASO
5
[PNP / NPN]
Collector Current, IC -- A
s
IC=1A
1.0
7
5
10
m
DC
3
0.1
7
5
2
10
s
s
op
ati
on
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2×0.8mm)
For PNP, minus sign is omitted
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Collector-to-Emitter Voltage, VCE -- V
[PNP / NPN]
1.2
0m
er
2
3
s
s
0μ
0μ
10
50
1m
2
Collector Dissipation, PC -- W
3
PC -- Ta
1.4
ICP=3A
1.0
M
ou
0.9
nte
do
0.8
na
ce
ram
ic
0.6
bo
ard
(60
0m
0.4
m2
×0
.8m
0.2
m)
1u
nit
0
3
5 7
IT09272
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT01660
No.8205-5/8
CPH5517
Embossed Taping Specification
CPH5517-TL-E
No.8987-6/7
CPH5517
Outline Drawing
CPH5517-TL-E
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.8205-7/8
CPH5517
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PS No.8205-8/8